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2008 CONFERENCE SPONSORS
(partial list, as of January 22, 2008)
MANTECH is an independent
not-for-profit organization whose mission is to promote technical discussion
and scientific education in the compound semiconductor manufacturing
industry. The continued success of the conference is enabled by donations
from corporate sponsors. The 2008 MANTECH Conference Committee gratefully
acknowledges the support from our sponsors.
RF Micro Devices
MAX International Engineering
Group
Cree
Skyworks Solutions
Aixtron
Freiberger Compound Materials
TriQuint Semiconductor
Oerlikon
OKI
Sumitomo Electric
Northrop Grumman
Anadigics
M/A-Com
CS MANTECH works to support
the compound semiconductor industry
in cooperation with
The Japan
Society of Applied Physics
2008 MEDIA SPONSORS
Semiconductor Today
Compound Semiconductor Magazine
Yole
Développement
– Micronews
Semiconductor International
CompoundSemi Online
Small
Times
LED
Journal
2007 CORPORATE SPONSORS
We would again like to thank our 2007
sponsors.
Booz Allen
Hamilton
Skyworks
MAX
International Engineering Group
Tegal
Oki
Hitachi Cable
Picogiga
Freiberger
Sumitomo
Electric
Northrop Grumman
TriQuint
Semiconductor
ST Systems
Anadigics
AXT
2008 CONFERENCE HIGHLIGHTS
(Back to Conference at a Glance)
The 2008 CS MANTECH program
begins on Monday April 14th with a series of tutorial
Workshops from
1 to 6 p.m. Workshops will be in parallel sessions, and attendees can
choose to attend 3 of the 90 minute workshops.
When the workshops end, go directly to the
exhibit hall. The Exhibits open at 6 p.m. with the
annual reception…the best industry networking event of the year!
The Conference formally opens Tuesday morning
with a brief overview and awards for the best papers from the 2007
conference. After the conference opening, we will begin our extended
Plenary Session. Speakers from Motorola,
Peregrine Semiconductor, and RF Micro Devices talk about business and
technical trends in electronics that are enabling our increasingly wireless
world. We then have three speakers who drive research that will shape our
future. The commercial, government, and the academic research communities
will all be represented as we will hear from Intel, DARPA, and the
University of Illinois. With the conference in Illinois for the first time,
it is fitting that our extended plenary begins and ends with Illinois-based
Motorola and the University of Illinois, both of whom are central to the
past, present, and future of compound semiconductors.
After lunch in the exhibits hall, Tuesday
afternoon will feature applications-focused papers, both electronic and
optoelectronic. Three papers in the electronic area will cover GaAs power
switches, the frontier of terahertz electronics, and an innovative approach
to hetero-integration: systems in a foil. After an innovative coffee break
(a MANTECH first: an Irish coffee break!) we will hear from speakers about
compound semiconductors penetrating general lighting applications with white
light, and the white-hot topic of solar energy. The final hour of
presentations on Tuesday will feature parallel presentations from industry
suppliers – our Exhibitors’ Forum. We will move out of the Westin on
Tuesday evening for a hands-on driving experience: Chicago Indoor Racing!
Wednesday and Thursday are packed with
technical papers on compound semiconductor manufacturing technology. With
many papers and limited time, we will distribute box lunches on Wednesday
and Thursday. For those wishing to maximize their exposure to the broad
range of topics presented, there is no need to stop for lunch! Even those
prone to self-abuse will not be able to see everything, as Wednesday again
features parallel sessions. With parallel sessions, a short lunch break,
and rump sessions into the evening, the day has a new name –
No Mercy Wednesday. One side of Wednesday’s
parallel sessions focuses on emerging wide bandgap technologies, while the
other side covers the process, yield, device, and reliability topics for
which CS MANTECH is well known.
Wednesday evening features the popular
Rump Sessions. Eat, drink, and debate!
Attendees may join any of the four parallel topics, where moderators will
encourage informal and highly interactive discussions.
Thursday morning continues with excellent
technical papers on devices, circuits, and manufacturing. At the lunch hour
we have another CS MANTECH first: An Hour with
Industry Analysts. Grab a box lunch and hear three market analysts
present their take on what’s happening in the compound semiconductor
industry! Thursday afternoon is our Interactive
Forum poster session. The session includes
papers on a diverse range of topics, as well as posters of all the papers
presented earlier in the technical program. Attendees have an excellent
opportunity to meet with authors to discuss their papers.
Our final event is the
Closing Reception. Our closing reception
will feature a drawing for a Blu-ray DVD player – MANTECH’s tribute to GaN
lasers! All those who completed and submitted their Feedback Forms can win!
WORKSHOPS
(Back to Conference at a Glance)
Workshop attendees can
improve their understanding of various fields, as industry and university
experts share their knowledge and hands-on experience. Parallel sessions
will be offered, covering the history of compound semiconductors, gallium
nitride technology, fundamental III-N device physics, power amplifier
modules, and solar cells. For the latest schedule, please see our web site
www.csmantech.org.
Our workshops will begin with “GaN
Technology” by Dr. Umesh Mishra of the University of California, Santa
Barbara. AlGaN/GaN HEMTs are emerging as a preferred technology for a
variety of applications ranging in frequency from microwave and mm-wave
amplifiers to high voltage power switching. These applications demand that
devices have different designs as the trade-offs are application specific.
In this workshop/short course, the evolution of device design will be
addressed and the baseline device including SiN passivation and field plates
for field mitigation will be discussed in detail. Devices for high voltage
switching power applications will then be reviewed. These will include
vertical device structures such as the Current Apertured Vertical Electron
Transistor (CAVET). Lastly, new designs such as deep-recessed structures
with reduced need for passivation will be discussed.
Our next workshop will be presented by Dr. Jerry Woodall, “Compound
Semiconductor Materials and Devices: How We Got Here and Where We Might Be
Going”. This workshop will review how compound semiconductor materials and
devices evolved. Dr. Woodall will focus on the roles of heterojunctions and
the challenge of solving surface and interface issues in this continuing
success story. He will also cover nanotechnology and the potential for
developments over the coming decades.
Dr. Michael Shur will delve into
the device physics of compound semiconductor’s newest technologies: “Physics
of III-N-based Field Effect Transistors”. This workshop will discuss how
wurtzite (hexagonal) symmetry makes the device physics of GaN/AlN/InN
heterostructure field effect transistors (HFETs) quite different from more
conventional GaAs/InAs/InP & Si FETs. Polarization at AlGaN/GaN and AlGaInN/InGaN
interfaces leads to the formation of two-dimensional (2D) electron gas with
concentrations 10 to 20 times higher than more conventional FETs, with
enhanced electron mobilities but a reduced peak velocity. Quantum well
designs have been used to control the electron transfer from the 2D channel
into adjacent layers. High electric fields at the gate edges lead to an
additional strain and hot electron effects causing current collapse and gate
lag. Large electron densities in the HFET channels minimize 1/f noise,
making it even smaller than for highly doped GaN films. This device physics
necessitates new approaches to device design. Inverted HFET devices are
expected to have a reduced access resistance, a larger current carrying
capability, lower gate leakage, and better thermal control. Insulated gate
heterostructure field effect transistors demonstrated superior performance
and reliability. Field plates, recessed and double-recessed gates, and
drain field controlled electrodes have been used to control current collapse
and improve device reliability. Power and RF switching applications of III-N
based transistors have emerged to take advantage of superior current
carrying capabilities and low access resistance.
Dr. Steve Eglash from Cyrium Technologies will give a tutorial on
“Opportunities in III-V Semiconductor Solar Cells”.
The diversity of solar energy solutions includes technologies such as
high-concentration photovoltaics using compound semiconductor devices,
thin-film silicon, CdTe, CIGS, and third-generation technologies such as
organic PV and multiple exciton generation materials, as well as solar
thermal technologies.
This workshop will focus on systems using
multi-junction cells and will answer questions such as: Why have certain
designs and architectures been chosen? What is the competitive landscape?
This workshop will also address the technology and economics of
multi-junction cells including cost, performance, design, and device
physics. Manufacturing issues and opportunities will be explored including
similarities and differences between III-V PV and other III-V devices such
as HBLEDs and GaAs ICs. We will examine manufacturing models and cost
drivers.
Ken Weller is our speaker for
“Power Amplifier Modules.” Digital modulation schemes have evolved from the
"constant envelope" GMSK technique applied for GSM to complex,
multi-channel, code-domain-multiplexed methods used in CDMA2000 and WCDMA
systems. Although more complex modulation schemes facilitate wireless packet
switched data services analogous to today's wired internet, linearity
requirements imposed on the components making up the transmit chain in the
handset radio become much more stringent. This workshop first reviews
motivation and basic concepts behind modern digital modulation techniques as
applied to cellular networks. Metrics and the ramifications of evolution
toward more complex modulation schemes will be discussed, with a focus on
the power amplification function. This will lead into a survey of power
amplifier approaches taken to meet various application requirements. The
workshop will conclude with a prognosis of the challenges that will be
imposed on handset RF component vendors as services migrate to "3G" and "4G"
in the future.
Please see
our website,
www.csmantech.org
for more information. One Workshop Registration fee covers all workshops.
Except for student registration, the Workshop is not included in the
Conference Registration Fee.
INDUSTRY EXHIBITS
(Back to Conference at a Glance)
At 6 p.m., when the Workshops end,
the Exhibition opens. Monday evening’s Exhibits Reception is simply the
best networking opportunity in our industry. Everyone is there, food is
provided, the bar is open, and no one drives home. Exhibits will stay open
all day on Tuesday, beginning with continental breakfast at 7 a.m. On
Tuesday we have extended coffee breaks and our buffet style Exhibits Lunch
(12 p.m. -1:30 p.m.) in the exhibits area. Attendees have ample opportunity
to greet old friends and meet new ones. This year, for the first time, the
exhibits will stay open on Wednesday from 7 a.m. until 1 p.m. This
additional half-day is scheduled to allow for discussion with Exhibitors
following presentations at the Tuesday afternoon Exhibitors’ forum (see
below).
MANTECH extends an invitation to family and
friends to join us at this special event Tuesday night at Chicago Indoor
Racing. The facility contains two indoor race tracks featuring Bowman
Race Karts that reach 35 m.p.h. The reception will be held in a room with a
view of the race tracks. Dinner will feature an “All Chicago” menu, a full
bar, and multiple gaming areas. So prepare for a fun evening of action!
Racers have to be 18 and hold a valid drivers license. C.I.R has a zero
tolerance for alcohol for racing, so race early – drink late. Guest tickets
are $50 each. Purchase guest tickets at the time of your registration to
ensure space at the reception!!
2007 BEST PAPER AWARDS
(Back to Conference at a Glance)
CS MANTECH recognizes the authors of the best paper and best
student paper of the previous conference, as determined from conference
attendee votes tallied from feedback forms. Awards will be presented during
the conference opening on Tuesday, April 15.
Authors of the Best Paper receive the He Bong Kim award, named in
honor of Dr. He Bong Kim, founder of the International Conference on
Compound Semiconductor Manufacturing Technology. The He Bong Kim award
winners for the 2007 conference are T.S. Low, K.W. Alt, R.E. Yeats, C.P.
Hutchinson, D.K. Kuhn, M. Iwamoto, M.E. Adamski, R.L. Shimon, T.E. Shirley,
M. Bonse, F.G. Kellert, and D.C. D’Avanzo of Agilent Technologies, Inc.; A.
Wibowo, S. Hassler, N. Pan, and G. Hillier of MicroLink Devices, Inc.; and
H. Badawi, M. Young, and W. Liu of AXT, Inc. for their paper “The Role of
Substrate Dislocations in Causing Infant Failures in High Complexity InGaP/GaAs
HBT ICs.”
Two papers
are recognized as co-winners of the 2007 Best Student Paper. They are
“Development of Simple Electrolytes for the Electrodeposition and
Electrophoretic Deposition of Pb-free, Sn-based Alloy Solder Films,”
authored by Chunfen Han, Qi Liu, and Douglas Ivey of the University of
Alberta, and “AlGaN/GaN High Electron Mobility Transistors and Diodes
Fabricated on Large Area Silicon on Poly-SiC (SopSiC) Substrates for Lower
Cost and Higher Yield,” authored by Travis J. Anderson, F. Ren, L. Voss, M.
Hlad, B.P. Gila, S.J. Pearton, J. Kim, and J. Lin of the University of
Florida; and P. Bove, H. Lahreche, J. Thuret, and R Langer of PicoGiga
International. The principle student authors of these two papers, Chunfen
Han and T.J. Anderson, will each receive a special cash award of $1000.
Congratulations to these winning teams for their fine work!
The SEMI
Standards meeting is scheduled for Wednesday, April 16, from 7 p.m. to 9
p.m. for those interested in standards for wafer specifications. Topics
being addressed are GaAs, InP, and SiC mechanical and electrical properties,
epitaxial layer specifications, and non-destructive test methods. Contact
Russ Kremer (russ@fcm-us.com),
Jim Oliver (j.oliver@ngc.com)
or Ian McLeod (imcleod@semi.org)
for more information.
2008 EXECUTIVE
COMMITTEE
Conference Chair
Marty Brophy, TriQuint Semiconductor
Secretary
Jon Abrokwah, Freescale
Semiconductor
Treasurer
Monte Drinkwine, Tyco
Electronics
Publications and
Technical Program Chair
Scott Davis,
Sumitomo Electric
Registration and
Local Arrangements Chair
Steve Mahon,
TriQuint Semiconductor.
Workshop Chair
Mike Barsky, Northrop Grumman
Publicity Chair
Michelle Bourke, Surface Technology Systems
Exhibits Chair
Scott Sheppard, Cree
Web Chair
David Via, Air Force Research
Laboratory
University Liaison
Heather
Knoedler, Skyworks Solutions
Local Arrangements
Vice-Chair
Russell Kremer, Freiberger Compound
Materials
Sponsorship
Oded Tal, MAX IEG
European Liaison
Paul Cooke, IQE
Asian Liaison
Yohei Otoki, Hitachi Cable.
Executive Advisory
Board
Jim Sewell, Air Force Research
Laboratory
George Henry, Northrop Grumman
Executive Committee Members
Celicia Della-Morrow, Sumika Electronic
Materials
Pat Fowler, Anadigics
Karen Renaldo, Northrop Grumman
MANTECH
Support
Lucky Leong,
Certified Public Accountant
Lucky Gold, Conference Services
Lynn Fincher, Webmaster
Margaret Doyle, Executive Assistant
TECHNICAL PROGRAM COMMITTEE
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Kamal Alavi, Raytheon RF Components
Zaher Bardai, IMN.epiphany
Tom Bird, Veeco Compound Semiconductor
John Blevins, Air Force Research Laboratory
Karlheinz Bock, Fraunhofer Institute
Karim Boutros, Teledyne Scientific
Doug Carlson, Tyco Electronics
Mike Clausen, RF Micro Devices
Suzanne Combe,
TriQuint Semiconductor
Jim Crites, Tyco Electronics
Etienne Delhaye, NXP Semiconductors
Andreas Eisenbach, IQE
Dieter Eissler, OSRAM Opto Semiconductor
Peter Ersland, Tyco Electronics
Patrick Fay, University of Notre Dame
Milton Feng, University of Illinois
Mike Fresina, RF Micro Devices
Drew Hanser, Kyma Technologies
Allen Hanson, Nitronex
Chang-Hwang Hua, WIN Semiconductors
Yung-Chung Kao, IntelliEPI
Tamotsu Kimura, OKI Optical Components
Nick Kolarich, Kopin
Judy Kronwasser, NOVASiC
Chun-Lim Lau, Booz Allen Hamilton
Amy Liu, IQE
Tom Low, Agilent Technologies
Earl Lum, EJL Wireless Research
Miro Micovic, HRL
Eizo Mitani, Eudyna Devices
Motoo Nakagawa, Panasonic.
Noren Pan, Microlink Devices
Thomas Roedel, NXP Semiconductors
Mariam Sadaka, ColdWatt
Robert Sadler, Northrop Grumman
Keith Salzman, TriQuint Semiconductor
Chris Santana, RF
Micro Devices
Ruediger Schreiner, Aixtron
Shyh-Chiang Shen, Georgia Tech
Alex Smith, Brewer Science
Andy Souzis,
II-VI
Jorg Splettsloesser, United Monolithic Semiconductor
Kevin Stevens, Kopin
Andrew Stoltz, US Army Night
Vision Laboratory
Mike Sun, Skyworks Solutions
Bob Surridge, Gain Microwave
Julien Thuret, Picogiga
David Wang, Global Communication Semiconductors
Paul Werbaneth, Tegal
Russ Westerman, Oerlikon
Victoria Williams, TriQuint Semiconductor
Guoliang Zhou, Skyworks Solutions |
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Monday, April 14
(Back
to Conference at a Glance) |
WORKSHOP
Chair:
Mike
Barsky, Northrop Grumman |
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1:00 PM - 2:30 PM
Workshop Session One |
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2:45 PM - 4:15 PM
Workshop Session Two |
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4:30 PM - 6:00 PM
Workshop Session Three |
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GaN Technology
Umesh Mishra
University of
California, Santa Barbara
Solar Cell Fundamentals
Steve Eglash
Cyrium Technologies
History of Heterostructure Devices
Jerry Woodall
Purdue University
Physics of III-N Field Effect Transistors
Michael Shur
Rensselaer Polytechnic
Institute
Power Amplifier Modules
Ken Weller
Skyworks Solutions
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6:00
PM |
EXHIBITS RECEPTION |
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Tuesday, April 15
(Back
to Conference at a Glance) |
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8:00
AM |
Conference Openings
Marty Brophy, TriQuint Semiconductor
Conference
Chair |
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8:10
AM |
2007 Conference Best
Paper Awards
Jim
Sewell, Air Force Research Laboratory
Executive
Advisor, 2005 Conference Chair |
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8:20
AM |
Technical Program
Highlights
Scott
Davis, Sumitomo Electric
Publications and Technical Program Chair |
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PLENARY SESSION
(Back
to Conference at a Glance) |
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Chair: |
Scott Davis, Sumitomo Electric |
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8:30
AM |
Invited Presentation
1.1
Market Trends for Compound Semiconductor Enabled Devices
Bruce
Bernhardt, Motorola Mobile Devices |
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9:00
AM |
Invited Presentation
1.2
The Future of CMOS on Sapphire in Handset Applications
Dylan
Kelly, Peregrine Semiconductor |
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9:30
AM |
Invited Presentation
1.3
Compound Semiconductors: From Oddity to Commodity
Curt
Barratt, RF Micro Devices |
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10:00
AM |
BREAK |
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10:30
AM |
Invited Presentation
1.4
III-V on Silicon for Future High Speed
and
Ultra-low Power Digital Applications: Challenges and
Opportunities
Robert Chau, Intel |
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11:00
AM |
Invited Presentation
1.5
The DARPA Compound Semiconductors on Silicon (COSMOS)
Program
Mark
Rosker, Defense Advanced Research Projects
Agency |
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11:30
AM |
Invited Presentation
1.6
The Past, Present, and Future of III-V
Compound
Semiconductor Materials and Devices
Ilesanmi
Adesida, University of
Illinois, Urbana-Champaign |
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12:00
PM |
EXHIBITS LUNCHEON |
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SESSION 2:
Innovative Electronic Applications |
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Chair: |
Amy
Liu, IQE |
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1:30 PM |
Invited Presentation
2.1 Novel
GaAs
Switch for Compact and Efficient Power Conversion
Mariam
Sadaka1,
Sriram Chandrasekaran1,
A1 Rozman1,
Wonill Ha2,
Bobby Brar2,
and Chanh Nguyen2,
1ColdWatt
and
2Teledyne
Scientific |
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2:00
PM |
Invited Presentation
2.2
Terahertz Electronics
Michael
Shur, Rensselaer Polytechnic Institute |
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2:30
PM |
Invited Presentation
2.3
Heterointegration Technologies for "Systems
in a Foil"
Karlheinz
Bock, Fraunhofer Institute for Reliability
and Microintegration |
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3:30
PM |
IRISH COFFEE BREAK |
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SESSION 3:
OPTO
(Back to Conference at a Glance) |
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Chair: |
Tom
Bird, Veeco Compound Semiconductor |
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3:30
PM |
Invited Presentation
3.1
High-Power LED’s in General
Illumination
Applications
Paul
Scheidt, Cree Solid State Lighting |
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4:00
PM |
Invited Presentation
3.2
Latest Advances in Multi-junction Photovoltaics
Alex
Slade, Amonix |
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4:30
PM |
VENDOR FORUM |
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6:30
PM |
Buses load for Reception/Indoor Racing |
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Wednesday,
April 16
(Back
to Conference at a Glance) |
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SESSION 4:
Process i
(Back to Conference at a Glance) |
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Chairs: |
Mike Clausen, RF Micro Devices Jim
Crites, Tyco Electronic |
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8:00
AM |
4.1
Reduction of Process Variation Through Automated
Substrate
Temperature Uniformity Mapping in Multi-Wafer MBE
Systems
Thomas J. Rogers1, Likang Li1,
Robert Yanka1, Chris Santana1,
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