AdvanceProgram 2008

MANTECH is an independent not-for-profit organization whose mission is to promote technical discussion and scientific education in the compound semiconductor manufacturing industry. The continued success of the conference is enabled by donations from corporate sponsors. The 2008 MANTECH Conference Committee gratefully acknowledges the support from our sponsors.

CS MANTECH works to support
the compound semiconductor industry
in cooperation with
The Japan Society of Applied Physics

2008 CONFERENCE HIGHLIGHTS (Back to Conference at a Glance)
The 2008 CS MANTECH program begins on Monday April 14^th with a series of tutorial Workshops from 1 to 6 p.m. Workshops will be in parallel sessions, and attendees can choose to attend 3 of the 90 minute workshops.

When the workshops end, go directly to the exhibit hall. The Exhibits open at 6 p.m. with the annual reception…the best industry networking event of the year!

The Conference formally opens Tuesday morning with a brief overview and awards for the best papers from the 2007 conference. After the conference opening, we will begin our extended Plenary Session. Speakers from Motorola, Peregrine Semiconductor, and RF Micro Devices talk about business and technical trends in electronics that are enabling our increasingly wireless world. We then have three speakers who drive research that will shape our future. The commercial, government, and the academic research communities will all be represented as we will hear from Intel, DARPA, and the University of Illinois. With the conference in Illinois for the first time, it is fitting that our extended plenary begins and ends with Illinois-based Motorola and the University of Illinois, both of whom are central to the past, present, and future of compound semiconductors.

After lunch in the exhibits hall, Tuesday afternoon will feature applications-focused papers, both electronic and optoelectronic. Three papers in the electronic area will cover GaAs power switches, the frontier of terahertz electronics, and an innovative approach to hetero-integration: systems in a foil. After an innovative coffee break (a MANTECH first: an Irish coffee break!) we will hear from speakers about compound semiconductors penetrating general lighting applications with white light, and the white-hot topic of solar energy. The final hour of presentations on Tuesday will feature parallel presentations from industry suppliers – our Exhibitors’ Forum. We will move out of the Westin on Tuesday evening for a hands-on driving experience: Chicago Indoor Racing!

Wednesday and Thursday are packed with technical papers on compound semiconductor manufacturing technology. With many papers and limited time, we will distribute box lunches on Wednesday and Thursday. For those wishing to maximize their exposure to the broad range of topics presented, there is no need to stop for lunch! Even those prone to self-abuse will not be able to see everything, as Wednesday again features parallel sessions. With parallel sessions, a short lunch break, and rump sessions into the evening, the day has a new name – No Mercy Wednesday. One side of Wednesday’s parallel sessions focuses on emerging wide bandgap technologies, while the other side covers the process, yield, device, and reliability topics for which CS MANTECH is well known.

Wednesday evening features the popular Rump Sessions. Eat, drink, and debate! Attendees may join any of the four parallel topics, where moderators will encourage informal and highly interactive discussions.

Thursday morning continues with excellent technical papers on devices, circuits, and manufacturing. At the lunch hour we have another CS MANTECH first: An Hour with Industry Analysts. Grab a box lunch and hear three market analysts present their take on what’s happening in the compound semiconductor industry! Thursday afternoon is our Interactive Forum poster session. The session includes papers on a diverse range of topics, as well as posters of all the papers presented earlier in the technical program. Attendees have an excellent opportunity to meet with authors to discuss their papers.

WORKSHOPS (Back to Conference at a Glance)
Workshop attendees can improve their understanding of various fields, as industry and university experts share their knowledge and hands-on experience. Parallel sessions will be offered, covering the history of compound semiconductors, gallium nitride technology, fundamental III-N device physics, power amplifier modules, and solar cells. For the latest schedule, please see our web site www.csmantech.org.

Our workshops will begin with “GaN Technology” by Dr. Umesh Mishra of the University of California, Santa Barbara. AlGaN/GaN HEMTs are emerging as a preferred technology for a variety of applications ranging in frequency from microwave and mm-wave amplifiers to high voltage power switching. These applications demand that devices have different designs as the trade-offs are application specific. In this workshop/short course, the evolution of device design will be addressed and the baseline device including SiN passivation and field plates for field mitigation will be discussed in detail. Devices for high voltage switching power applications will then be reviewed. These will include vertical device structures such as the Current Apertured Vertical Electron Transistor (CAVET). Lastly, new designs such as deep-recessed structures with reduced need for passivation will be discussed.

Our next workshop will be presented by Dr. Jerry Woodall, “Compound Semiconductor Materials and Devices: How We Got Here and Where We Might Be Going”. This workshop will review how compound semiconductor materials and devices evolved. Dr. Woodall will focus on the roles of heterojunctions and the challenge of solving surface and interface issues in this continuing success story. He will also cover nanotechnology and the potential for developments over the coming decades.

Dr. Michael Shur will delve into the device physics of compound semiconductor’s newest technologies: “Physics of III-N-based Field Effect Transistors”. This workshop will discuss how wurtzite (hexagonal) symmetry makes the device physics of GaN/AlN/InN heterostructure field effect transistors (HFETs) quite different from more conventional GaAs/InAs/InP & Si FETs. Polarization at AlGaN/GaN and AlGaInN/InGaN interfaces leads to the formation of two-dimensional (2D) electron gas with concentrations 10 to 20 times higher than more conventional FETs, with enhanced electron mobilities but a reduced peak velocity. Quantum well designs have been used to control the electron transfer from the 2D channel into adjacent layers. High electric fields at the gate edges lead to an additional strain and hot electron effects causing current collapse and gate lag. Large electron densities in the HFET channels minimize 1/f noise, making it even smaller than for highly doped GaN films. This device physics necessitates new approaches to device design. Inverted HFET devices are expected to have a reduced access resistance, a larger current carrying capability, lower gate leakage, and better thermal control. Insulated gate heterostructure field effect transistors demonstrated superior performance and reliability. Field plates, recessed and double-recessed gates, and drain field controlled electrodes have been used to control current collapse and improve device reliability. Power and RF switching applications of III-N based transistors have emerged to take advantage of superior current carrying capabilities and low access resistance.

Dr. Steve Eglash from Cyrium Technologies will give a tutorial on “Opportunities in III-V Semiconductor Solar Cells”. The diversity of solar energy solutions includes technologies such as high-concentration photovoltaics using compound semiconductor devices, thin-film silicon, CdTe, CIGS, and third-generation technologies such as organic PV and multiple exciton generation materials, as well as solar thermal technologies.

This workshop will focus on systems using multi-junction cells and will answer questions such as: Why have certain designs and architectures been chosen? What is the competitive landscape? This workshop will also address the technology and economics of multi-junction cells including cost, performance, design, and device physics. Manufacturing issues and opportunities will be explored including similarities and differences between III-V PV and other III-V devices such as HBLEDs and GaAs ICs. We will examine manufacturing models and cost drivers.

Ken Weller is our speaker for “Power Amplifier Modules.” Digital modulation schemes have evolved from the "constant envelope" GMSK technique applied for GSM to complex, multi-channel, code-domain-multiplexed methods used in CDMA2000 and WCDMA systems. Although more complex modulation schemes facilitate wireless packet switched data services analogous to today's wired internet, linearity requirements imposed on the components making up the transmit chain in the handset radio become much more stringent. This workshop first reviews motivation and basic concepts behind modern digital modulation techniques as applied to cellular networks. Metrics and the ramifications of evolution toward more complex modulation schemes will be discussed, with a focus on the power amplification function. This will lead into a survey of power amplifier approaches taken to meet various application requirements. The workshop will conclude with a prognosis of the challenges that will be imposed on handset RF component vendors as services migrate to "3G" and "4G" in the future.

INDUSTRY EXHIBITS (Back to Conference at a Glance)

At 6 p.m., when the Workshops end, the Exhibition opens. Monday evening’s Exhibits Reception is simply the best networking opportunity in our industry. Everyone is there, food is provided, the bar is open, and no one drives home. Exhibits will stay open all day on Tuesday, beginning with continental breakfast at 7 a.m. On Tuesday we have extended coffee breaks and our buffet style Exhibits Lunch (12 p.m. -1:30 p.m.) in the exhibits area. Attendees have ample opportunity to greet old friends and meet new ones. This year, for the first time, the exhibits will stay open on Wednesday from 7 a.m. until 1 p.m. This additional half-day is scheduled to allow for discussion with Exhibitors following presentations at the Tuesday afternoon Exhibitors’ forum (see below).

MANTECH’s exhibits provide an opportunity for device manufacturers to see suppliers of equipment, materials, and other services in a single location. Industry suppliers have long known that MANTECH’s exhibition is the best opportunity of the year to congregate with the key players in the compound semiconductor industry.

Those who know reserve their booth space early. The exhibits often sell out, so you would be wise to book your space now. Visit our web site at www.csmantech.org, and click on the Exhibitors link. For any questions please contact Scott Sheppard, Exhibits Chair, 919-313-5549

The exhibitors’ forum allows participating companies to introduce new products or highlight company strengths in a short presentation. This year’s forum will be on Tuesday from 4:30 p.m. – 5:30 p.m. There will be parallel sessions to maximize the number companies that can participate. With the extended exhibit hours on Wednesday, attendees and exhibitors will have the opportunity for discussion after forum presentations. Presentation slots can be requested when signing up for a booth. Presentation slots are limited, so sign up early!

MANTECH extends an invitation to family and friends to join us at this special event Tuesday night at Chicago Indoor Racing. The facility contains two indoor race tracks featuring Bowman Race Karts that reach 35 m.p.h. The reception will be held in a room with a view of the race tracks. Dinner will feature an “All Chicago” menu, a full bar, and multiple gaming areas. So prepare for a fun evening of action! Racers have to be 18 and hold a valid drivers license. C.I.R has a zero tolerance for alcohol for racing, so race early – drink late. Guest tickets are $50 each. Purchase guest tickets at the time of your registration to ensure space at the reception!!

2007 BEST PAPER AWARDS (Back to Conference at a Glance)

CS MANTECH recognizes the authors of the best paper and best student paper of the previous conference, as determined from conference attendee votes tallied from feedback forms. Awards will be presented during the conference opening on Tuesday, April 15.

Authors of the Best Paper receive the He Bong Kim award, named in honor of Dr. He Bong Kim, founder of the International Conference on Compound Semiconductor Manufacturing Technology. The He Bong Kim award winners for the 2007 conference are T.S. Low, K.W. Alt, R.E. Yeats, C.P. Hutchinson, D.K. Kuhn, M. Iwamoto, M.E. Adamski, R.L. Shimon, T.E. Shirley, M. Bonse, F.G. Kellert, and D.C. D’Avanzo of Agilent Technologies, Inc.; A. Wibowo, S. Hassler, N. Pan, and G. Hillier of MicroLink Devices, Inc.; and H. Badawi, M. Young, and W. Liu of AXT, Inc. for their paper “The Role of Substrate Dislocations in Causing Infant Failures in High Complexity InGaP/GaAs HBT ICs.”

Two papers are recognized as co-winners of the 2007 Best Student Paper. They are “Development of Simple Electrolytes for the Electrodeposition and Electrophoretic Deposition of Pb-free, Sn-based Alloy Solder Films,” authored by Chunfen Han, Qi Liu, and Douglas Ivey of the University of Alberta, and “AlGaN/GaN High Electron Mobility Transistors and Diodes Fabricated on Large Area Silicon on Poly-SiC (SopSiC) Substrates for Lower Cost and Higher Yield,” authored by Travis J. Anderson, F. Ren, L. Voss, M. Hlad, B.P. Gila, S.J. Pearton, J. Kim, and J. Lin of the University of Florida; and P. Bove, H. Lahreche, J. Thuret, and R Langer of PicoGiga International. The principle student authors of these two papers, Chunfen Han and T.J. Anderson, will each receive a special cash award of $1000. Congratulations to these winning teams for their fine work!

The SEMI Standards meeting is scheduled for Wednesday, April 16, from 7 p.m. to 9 p.m. for those interested in standards for wafer specifications. Topics being addressed are GaAs, InP, and SiC mechanical and electrical properties, epitaxial layer specifications, and non-destructive test methods. Contact Russ Kremer (russ@fcm-us.com), Jim Oliver (j.oliver@ngc.com) or Ian McLeod (imcleod@semi.org) for more information.

The conference ends Thursday afternoon with a Closing Reception. During the Interactive Forum, conference attendees will vote for best poster. The winning author will receive CS MANTECH’s Best Poster Award. We will also hold our Feedback Form Raffle for a Blu-Ray DVD player. Your Feedback Forms are very valuable in structuring future conferences and choosing best paper awards. You need not be present to win.

Registration and Local Arrangements Chair
Steve Mahon, TriQuint Semiconductor.

Local Arrangements Vice-Chair
Russell Kremer, Freiberger Compound Materials

Executive Advisory Board
Jim Sewell, Air Force Research Laboratory
George Henry, Northrop Grumman

Celicia Della-Morrow, Sumika Electronic Materials
Pat Fowler, Anadigics
Karen Renaldo, Northrop Grumman

Lucky Leong, Certified Public Accountant
Lucky Gold, Conference Services
Lynn Fincher, Webmaster
Margaret Doyle, Executive Assistant

Monday, April 14 (Back to Conference at a Glance)

WORKSHOP
Chair: Mike Barsky, Northrop Grumman

1:00 PM - 2:30 PM
Workshop Session One

2:45 PM - 4:15 PM
Workshop Session Two

4:30 PM - 6:00 PM
Workshop Session Three

GaN Technology
Umesh Mishra
University of California, Santa Barbara

Solar Cell Fundamentals
Steve Eglash
Cyrium Technologies

History of Heterostructure Devices
Jerry Woodall
Purdue University

Physics of III-N Field Effect Transistors
Michael Shur
Rensselaer Polytechnic Institute

Power Amplifier Modules
Ken Weller
Skyworks Solutions

6:00 PM

EXHIBITS RECEPTION

Tuesday, April 15 (Back to Conference at a Glance)

8:00 AM

Conference Openings
Marty Brophy, TriQuint Semiconductor
Conference Chair

8:10 AM

2007 Conference Best Paper Awards
Jim Sewell, Air Force Research Laboratory
Executive Advisor, 2005 Conference Chair

8:20 AM

Technical Program Highlights
Scott Davis, Sumitomo Electric
Publications and Technical Program Chair

PLENARY SESSION (Back to Conference at a Glance)

Chair:

Scott Davis, Sumitomo Electric

8:30 AM

Invited Presentation
1.1 Market Trends for Compound Semiconductor Enabled Devices
Bruce Bernhardt, Motorola Mobile Devices

9:00 AM

Invited Presentation
1.2 The Future of CMOS on Sapphire in Handset Applications
Dylan Kelly, Peregrine Semiconductor

9:30 AM

Invited Presentation
1.3 Compound Semiconductors: From Oddity to Commodity
Curt Barratt, RF Micro Devices

10:00 AM

BREAK

10:30 AM

Invited Presentation
1.4 III-V on Silicon for Future High Speed and Ultra-low Power Digital Applications: Challenges and Opportunities
Robert Chau, Intel

11:00 AM

Invited Presentation
1.5 The DARPA Compound Semiconductors on Silicon (COSMOS) Program
Mark Rosker, Defense Advanced Research Projects Agency

11:30 AM

Invited Presentation
1.6 The Past, Present, and Future of III-V Compound Semiconductor Materials and Devices
Ilesanmi Adesida, University of Illinois, Urbana-Champaign

12:00 PM

EXHIBITS LUNCHEON

SESSION 2: Innovative Electronic Applications

Chair:

Amy Liu, IQE

1:30 PM

Invited Presentation
2.1 Novel GaAs Switch for Compact and Efficient Power Conversion
Mariam Sadaka¹, Sriram Chandrasekaran¹, A1 Rozman¹, Wonill Ha², Bobby Brar², and Chanh Nguyen², ¹ColdWatt and ²Teledyne Scientific

2:00 PM

Invited Presentation
2.2 Terahertz Electronics
Michael Shur, Rensselaer Polytechnic Institute

2:30 PM

Invited Presentation
2.3 Heterointegration Technologies for "Systems in a Foil"
Karlheinz Bock, Fraunhofer Institute for Reliability and Microintegration

3:30 PM

IRISH COFFEE BREAK

SESSION 3: OPTO (Back to Conference at a Glance)

Chair:

Tom Bird, Veeco Compound Semiconductor

3:30 PM

Invited Presentation
3.1 High-Power LED’s in General Illumination Applications
Paul Scheidt, Cree Solid State Lighting

4:00 PM

Invited Presentation
3.2 Latest Advances in Multi-junction Photovoltaics
Alex Slade, Amonix

4:30 PM

VENDOR FORUM

6:30 PM

Buses load for Reception/Indoor Racing

Wednesday, April 16 (Back to Conference at a Glance)

SESSION 4: Process i (Back to Conference at a Glance)

Chairs:

Mike Clausen, RF Micro Devices
Jim Crites, Tyco Electronic

8:00 AM

4.1 Reduction of Process Variation Through Automated Substrate Temperature Uniformity Mapping in Multi-Wafer MBE Systems
Thomas J. Rogers¹, Likang Li¹, Robert Yanka¹, Chris Santana¹, Jason R. Williams², Charles A. Taylor II² and Darryl Barlett², ¹RF Micro Devices and ²k-Space Associates Inc

8:20 AM

4.2 Development and Characterization of Photodefinable Polybenzoxazole Buffer Layer for InGaP/GaAs HBT Technology
Dragana Barone, Jiro Yota, Hoa Ly, Stanley Mui, Shiban Tiku and Steve Canale, Skyworks Solutions

8:40 AM

4.3 Integration and Qualification of a Second Site HBT Epitaxal Wafer Foundry
Toshihide Kikkawa, David Troy, Andreas Eisenbach, Paul Cooke, Tony Pearce, Graham Clarke and Iwan Davies, IQE

9:00 AM

4.4 Use of Chemical Mechanical Polishing for Planarization of GaAs Integrated Circuits
Michael Meeder, Jeff Vass, Chuck Duncan, Walter Wohlmuth, Michael Fresina and Curt Barratt, RF Micro Devices

9:20 AM

4.5 Lessons Learned from Laser Dicing
Travis A. Abshere, Moreen Minkoff and Bill Howell, TriQuint Semiconductor

SESSION 5: Wide Bandgap Power Amps and Switching (Back to Conference at a Glance)

Chairs:

Andy Souzis, II-VI
Karim Boutros, Teledyne

8:00 AM

5.1 SiC and GaN Wide Bandgap Technology Commercial Status
J.W. Milligan, Cree

8:20 AM

5.2 Wafer Quality Target for Current-Collapse-Free GaN-HEMTs in High Voltage Applications
Hidetoshi Fujimoto, Wataru Saito, Akira Yoshioka, Tomohiro Nitta, Yorito Kakiuchi and Yasunobu Saito, Toshiba

8:40 AM

5.3 A Uniform, Reproducible and Reliable GaN HEMT Technology with Breakdown Voltages in Excess of 160V Delivering More Than 60% PAE at 80V
P. Waltereit¹, W. Bronner¹, R. Quay¹, M. Dammann¹, S. Müller¹, R. Kiefer¹, H. Walcher¹, F. van Raay¹, O. Kappeler¹, M. Mikulla¹, F. van Rijs², T. Rődle², S. Murad², J. Klappe², P. van der Wel², P. Henriette², B. Aleiner², I. Blednov², J. Thrope³, R. Behtash³, H. Blanck³ and K. Riepe³, ¹Fraunhofer Institute,² NXP Semiconductor and ³United Monolithic Semiconductors

9:00 AM

5.4 Over 80% Drain Efficiency CW AIGaN/GaN HEMT Power Amplifier
H.P. Xin, B. Achiriloaie, V.H. Ngo and A. Mkhitarian, Tyco Electronics

9:20 AM

5.5 Performance Improvement of High Power High Efficiency AIGaN/GaN HEMT Based on the Process Design of Experiment Approach
Yaron Knafo, Tamara Baksht, Oleg Aktushev, David Rozman and Gregory Bunin, Gal-El (MMIC)

9:40 AM

BREAK

SESSION 6: PROCESS II (Back to Conference at a Glance)

Chairs:

Andrew Stoltz, US Army Night Vision Laboratory
Jon Abrokwah, Freescale Semiconductor

10:00 AM

6.1 Via Etching in BCB for HBT Technology
H. Stieglauer, T. Wiedenmann, H. Bretz, H. Mietz and D. Behammer, United Monolithic Semiconductors

10:20 AM

6.2 Photodefinable Polybenzoxazole Interlevel Dielectric for GaAs HBT Applications
Jiro Yota, Hoa Ly, Dragana Barone, Mike Sun and Ravi Ramanathan, Skyworks Solutions

10:40 AM

6.3 Advanced Multilayer Interconnect Technology for Switch ICs Using InP HEMTs
Suehiro Sugitani, Kazumi Nishimura, Kiyomitsu Onodera & Hideki Kamitsuna, NTT

11:00 AM

6.4 Development of an On-Water Test for Rapid Evaluation of Doping Spike Carrier Concentration Levels in Commercially Manufactured GaAs Gunn Diodes for Automotive Radar Applications
N. Farrington¹, M. Carr², M. Missous¹, and J.L. Sly¹, ¹Microelectronics & Nanostructures Group, School of E&EE, University of Manchester and ² e2v Technologies (UK) Ltd.

11:20 AM

6.5 High Yield, Highly Scalable, High Voltage GaInP/GaAs HBT Technology
P. Kurpas¹, H. Weiss², B. Janke¹, A. Wentzel¹, L. Schmidt², C. Rheinfelder²and W. Heinrich¹, ¹Ferdinand-Braun-Institute für Hőchstfrequenztechnik (FBH) and ²Ubidyne

11:40 AM

6.6 Dry Etch Development for a Dual, Front and Backside Processing of II-VI Compound Semiconductors
A.J. Stoltz, P.R. Norton, US Army Night Vision and Electronic Sensors Directorate

SESSION 7: EMERGING DEVICES (Back to Conference at a Glance)

Chairs:

David Via, Air Force Research Laboratory
Judy Kronwasser , NOVASiC

10:00 AM

Invited Presentation
7.1 Ultrathin AlN/GaN Heterostructures Based HEMTs
Huili (Grace) Xing, Tom Zimmermann, David Deen, Yu Cao, Debdeep Jena and Patrick Fay, University of Notre Dame

10:30 AM

7.2 Materials Characterization and Device Performance Survey of InAlN/GaN HEMT Layers from Commercial Sources
G.H. Jessen, M. Trejo, G.D. Via, J.K. Gillespie, A. Crespo and D. Langley, Air Force Research Laboratory

10:50 AM

7.3 Deep Submicron GaN-based Heterostructure Field Effect Transistors with InGaN Channel and InGaN Back-barrier
Yanqing Deng, Vinod Adivarahan and Asif Khan, University of South Carolina

11:10 AM

7.4 Epitaxial Rare Earth Oxide Growth on GaN for Enhancement-mode MOSFETs
J.S. Jur, V.D. Wheeler, M.T. Veety, D.J. Lichtenwalner, D.W. Barlage and M.A.L. Johnson, North Carolina State University

11:30 AM

Student Presentation
7.5 Process and Performance GaN HBTs
Chao-Hsin Wu, Benjamin F. Chu-Kung and Milton Feng, University of Illinois

11:50 AM

Break: Box Lunches, EXhibit Area

SESSION 8: YIELD (Back to Conference at a Glance)

Chairs:

Chris Santana, RF Micro Devices
Paul Cooke, IQE

12:15 PM

Invited Presentation
8.1 Yield Improvement Methodology in a pHEMT GaAs Fabrication Facility
James Oerth, Christopher Doucette, Sushila Singh and Sean Doonan, Skyworks Solutions

12:45 PM

8.2 Elimination of Defects Causing Yield Loss on EFET Power Amps
Tertius Rivers, Richard Helm, Jinhong Yang, Sumir Varma, Ed Etzkorn, Jeremy Middleton, Rob Christ and Bill Howell, TriQuint Semiconductor

1:05 PM

8.3 Improvement of The Chipping Defect with a Four-Point Diamond Tool for GaAs Wafer Dicing Process
Jason Chou, Chang-Hwang Hua, Sen Yang and Ping-Wei Chen, WIN Semiconductors

1:25 PM

8.4 Defectivity Yield Improvement Activity to Eliminate Nitride Blisters
M.. Clausen, J. McMonagle, B. Green, G. Murdock, A. Miller, J. Cullen and J. Moran, Filtronic Compound Semiconductors

SESSION 9: MATERIALS INTEGRATION (Back to Conference at a Glance)

Chairs:

John Blevins, Air Force Research Laboratory
Ruediger Schreiner, Aixtron

12:15 PM

Invited Presentation
9.1 Heterogeneous Integration Using III-V Compound Semiconductors for Solar and Electronic Applications
M.S. Goorsky, S.L. Poust, M. Jackson and M.B. Joshi, UCLA

12:45 PM

9.2 Advances in Large Diameter GaN on Diamond Substrates
Jerry W. Zimmer and Gerry Chandler, SP3 Diamond Technologies

1:05 PM

9.3 Materials Characterization Comparison of GaN HEMT-on-Diamond Layers Pre- and Post-Attachment
John Carlin¹, Gregg Jessen¹, Jim Gillespie¹, David Tomich¹, Daniel Francis², John Wasserbauer², Firooz Faili²,Dubravko Babic² and Felix Ejeckam², ¹Air Force Research Laboratory and ²Group4 Labs, LLC.

1:25 PM

Student Presentation
9.4 Wafer-fused AlGaAs/GaAs/GaN HBTs with current gain of ~ 20 and VBR ~ 35 V
Chuanxin Liana and Huili (Grace) Xing, Notre Dame University

1:45 PM

AFTERNOON BREAK

SESSION 10: RELIABILITY (Back to Conference at a Glance)

Chairs:

Peter Ersland, Tyco Electronics
Mike Sun, Skyworks Solutions

2:00 PM

Invited Presentation
10.1 Reliability and MMIC Technology Development and Production
Thomas R. Block, Jeff Elliott, Peter Chou, Mike Biedenbender, Denise Leung, David Eng, Aaron Oki, Mike Wojtowicz, and Rich Lai, Northrop Grumman Space Technology

2:30 PM

10.2 Evaluating Device Reliability Using Wafer-level Accelerated Life-Testing
Dorothy June M. Hamada and William J. Roesch, TriQuint Semiconductor

2:50 PM

10.3 Layout Rule Effects on Capacitor Reliability
James D. Oliver, Harlan C. Cramer, and Richard J. Porter, Northrop Grumman Electronic Systems

3:10 PM

10.4 Measuring Liftoff Quality and Reliability with Special Test Structures
William J. Roesch and Dorothy June M. Hamada, TriQuint Semiconductor

SESSION 11: MEASUREMENT TECHNIQUES (Back to Conference at a Glance)

Chairs:

Tom Low, Agilent Technologies
Yohei Otoki, Hitachi Cable

2:00 PM

11.1 Analysis of DC-RF Dispersion in AlGaN/GaN HFETs using RF Waveform Engineering
Chris Roff¹, Johannes Benedikt¹, Paul J. Tasker¹, D.J. Wallis², K.P. Hilton², J.O.Maclean², D.G. Hayes², M. J. Uren^1,2 and T. Martin², ¹Cardiff University and ²QinetiQ Ltd.

2:20 PM

Student Presentation
11.2 Gallium Nitride Surface Treatment Study for FET Passivation Process Flow Applications
M. T. Veety, V. D. Wheeler, M.P. Morgensen, M.A.L. Johnson and D. W. Barlage, North Carolina State University

2:40 PM

Invited Presentation
11.3 Nanosecond Time-Resolved Raman Thermography: Probing Device and Channel Temperature in Pulsed-Operated GaN and GaAs HEMTs
J. W. Pomeroy¹, G. J. Riedel¹, M. Kuball¹, M.J.Uren², T. Martin², A. Bullen³ and M. Haynes³, ¹University of Bristo1, ² QinetiQ, ³SELEX

3:00 PM

Student Presentation
11.4 Charge Trapping at Surface in GaN HEMTs
Hsiang Chen, Phillip Preecha, John Lai and Guann-Pyng Li, University of California, Irvine

3:20 PM

11.5 Evaluation of Test Methods Employed for Characterizing Semi-Insulating Nature of Monocrystaline SiC Semiconductor Materials
M.F. MacMillan¹, W. Mitchel², J. Blevins², R. S. Sandhu³, G. Chung¹, M. Spaulding¹, T. F. Zoes¹, E. Emorhokpor⁴, C. Basceri⁵, J. Jenny⁵, E. Berkman⁵, Wolfgang Jantz⁶, W. Eichhorn⁷, A. Blew⁸, J.D. Oliver⁹, Mark Fanton¹⁰, Tim Bogart¹⁰ and Bill Eversson¹⁰, ¹Dow Corning² AirForce Research Laboratory, ³Northrop Grumman Space Technology, ⁴II-VI, ⁵Cree, ⁶SemiMap Scientific Instruments, ⁷Eichhorn and Hausman, ⁸ Lehighton Electronics, ⁹Northrop Grumman Electronic Systems, ¹⁰ Penn State Electro-Optics Center

3:40 PM

LATE AFTERNOON BREAK

SESSION 12: DEVICES (Back to Conference at a Glance)

Chairs:

Guoliang Zhou, Skyworks Solutions
Keith Salzman, TriQuint Semiconductor

4:00 PM

12.1 GaAs MESFET with Source-Connected Field Plate for High Voltage MMICs T.A. Winslow, M.J. Drinkwine, and M. Balzan, Tyco Electronic

4:20 PM

12.2 Improving the Breakdown Voltage for 100 nm GaAs pHEMTs by the Support of Device Simulations
P. Abele¹, M. Schaefer², M. Hosch³, J. Splettstoesser¹ and D. Behammer¹, ¹United Monolithic Semiconductors, ²CADWalk and ³University of Ulm

4:40 PM

12.3 Design and Fabrication of a Compact GaAs IPD Balun
Jon Abrokwah, Qiang Li, Lianjun Liu , Shahin Farahani, Dan Miller, Jyoti Mondal, Adolfo Reyes and Jim Cotronakis, Freescale Semiconducto

5:00 PM

12.4 Product Sensitivity Analysis on Multithrow TX/RX Switches
Jerod Mason, David Petzold, Aparna Joshi and Edward Aspell, Skyworks Solutions

5:20 PM

12.5 InP DHBT Technology for 100 Gbit/s Applications
R. Driad, R.E. Makon, F. Benkhelifa, and R. Lösch, Fraunhofer Institute for Applied Solid State Physics

SESSION 13: GaN PROCESSING

Chairs:

Victoria Williams, TriQuint Semiconductor
Robert Sadler, Northrop Grumman

4:00 PM

13.1 Effect of Gate Edge Silicidation on Gate Leakage Current in AlGaN/GaN HEMTs
Toshihiro Ohki, Masahito Kanamura, Naoya Okamoto, Kenji Imanishi, Kozo Makiyama, Kazukiyo Joshin, Toshihide Kikkawa and Naoki Hara, Fujitsu and Fujitsu Laboratories

4:20 PM

Student Presentation
13.2 Technology for Non-Recessed Short Gate Length E-Mode AlGaN/GaN High-Electron Mobility Transistors
Anirban Basu, Minjun Yan, Vipan Kumar, and Ilesanmi Adesida, University of Illinois at Urbana-Champaign

4:40 PM

Student Presentation
13.3 A Surface Treatment Technique for III-N Device Fabrication
Yun Zhang, Matthew Britt, Jae-Hyun Ryou, Russell D. Dupuis, and Shyh-Chiang Shen, Georgia TechS

5:00 PM

Student Presentation
13.4 Pre-passivation Plasma Surface Treatment Effects on Critical Device Electrical Parameters of AlGaN/GaN HEMTs
David J. Meyer, Joseph R. Flemish and Joan M. Redwing, Pennsylvania State University

5:20 PM

13.5 A Novel AlGaN/GaN Field Effect Diode with a Low Turn-on Voltage Operation using Fluoride-Based Plasma Treatment
K. Takatani, T. Nozawa, T. Oka, H. Kawamura, and K. Sakuno, Sharp

5:24 PM

BREAK

6:00 PM –
7:00 PM

RUMP SESSIONS

Chair:	Pat Fowler, Tyco Electroncis
1.	Will Silicon Replace GaAs? Is the wolf really coming? Moderator: Mike Sun, Skyworks Solutions
2.	The Decline & Fall of Western Civilization: World leadership in technology is shifting – who leads what? How (and how fast) is that changing? Moderator: Alex Smith, Brewer Science
3.	High Voltage Technology: GaN has its merits, but is far from the only high voltage option. Can high voltage MESFETs, HBTs and pHEMTs compete? Moderator: Peter Ersland, Tyco Electronics
4.	Fab-u-less or Not: Will the future belong to the fabless, fab light or the fab few? Making money and other reasons (are there any?) to decide. Moderator: Oded Tal, Max IEG
7:00 PM – 9:00 PM	SEMI Standards Meeting

Thursday, April 17 (Back to Conference at a Glance)

SESSION 14: DEVICE AND CIRCUIT TECHNOLOGY (Back to Conference at a Glance)

Chair:

Karlheinz Bock, Fraunhofer Institute

8:10 AM

Invited Presentation
14.1 An InGaP/GaAs HBT/JFET BiFET Technology for PA Bias Circuit Applications
B. Moser, W. Wohlmuth, M. Fresina, S. Nedeljkovic, W. Clausen, D. Halchin, J. Fendrich and D. Limanto, RF Micro Devices

8:45 AM

Student Presentation
14.2 Nano-scale Type-II InP/GaAsSb DHBTs to Reach THz Cutoff Frequencies
William Snodgrass and Milton Feng, University of Illinois at Urbana-Champaign

9:05 AM

Student Presentation
14.3 The Development of a Symbolically Defined Large Signal InP/GaAsSb Type-II DHBT Model for High Speed Mixed Signal Circuit Simulation
Mark Stuenkel, Yu-Ju Chuang, Kurt Cimino, William Snodgrass and Milton Feng, University of Illinois at Urbana-Champaign

9:25 AM

14.4 Thermal Management for 3-D Integrated Millimeter Wave RF Circuits Architectures
R. Sandhu, T. Chung, B. Poust, M. Parlee, R. Tsai, A. Noori, V. Temsevary,O. Fordham, P. Chang-Chien, X. Zeng, K. Tornquist, D. Duan, T. P. Chin, and M. Barsky, Northrop Grumman Space Technology

9:45 AM

BREAK

SESSION 15: MANUFACTURING (Back to Conference at a Glance)

Chairs:

Andreas Eisenbach, IQE
Paul Werbaneth, Tegal

10:05 AM

Invited Presentation
15.1 How to Succeed as a GaAs Foundry
Glen Riley, TriQuint Semiconductor

10:35 AM

Invited Presentation
15.2 Eliminating the Paper Runsheet; One FAB’s Foray Into the Paperless World
Richard Helm, Travis Abshere, Lisa Huynh, Paul Brodie and Karen Zakaria, TriQuint Semiconductor

11:05 AM

15.3 Factory Automation Beyond Recipe SelectionN.Thakkar, D. Beasley, A. Lopez, R. Caguioa and G. Hafer, Skyworks Solutions

11:25 AM

Invited Presentation
15.4 RF Module Assembly Overview
Wally Holgado, TriQuint Semiconductor

11:55 AM

BREAK (Box Lunches)

SESSION 16: AN HOUR WITH THE ANALYSTS (BOX LUNCH) (Back to Conference at a Glance)

Chair:

Drew Hanser, Kyma

12:15 PM

16.1 The Wireless Industry: Entering a State of Confusion and Chaos
Earl J. Lum, EJL Wireless Research

12:35 PM

16.2 Status of the SiC Power Devices Market
Dr. Philippe Roussel, Yole Développement

12:55 PM

16.3 Are Silicon Technologies Poised to Displace GaAs?
Asif Anwar, Strategy Analytics

1:15 PM - 2:34 PM

SESSION 17: INTERACTIVE FORUM (Back to Conference at a Glance)

Chairs:

Suzanne Combe, TriQuint Semiconductor
Alex Smith, Brewer Science

17.1

Maximizing Selectivity During Wet-Chemical Gold Etching
K.C. Su¹, H.H. Lu¹ C.C, Chen¹, and J. Moore², ¹Lee Chang Yung Chemical Industrial Corporation and ²DAETEC, LLC

17.2

Simple DOE-based Inductor Tool for Design Automation
K. Kwok¹, Shing Lee², Rui Lin¹ and P. Zampardi¹, ¹Skyworks Solutions and ²Peregrine Semiconductor

17.3

Application of Two-Phase Mechano-Chemical Polishing to ZnO Substrate Technology
P. Skupiński¹, K. Grasza^1,2, A. Mycielski¹, E ŁUSkowska¹ and H.Sakowska², ¹Institute of Physics, Polish Academy of Sciences and ²Institute of Electronic Materials Technology

17.4

He+ Plasma Cleaning of Epiready InSb(112)B Surfaces for Compound Semiconductor Heteroepitaxy
M. Jaime-Vasquez, A. J. Stoltz, R.N. Jacobs, L.A. Almeida, J.D. Benson, and M. Martinka, US Army Research, Night Vision and Electronic Sensors Directorate

17.5

Student Presentation
Monolithic Integration of an Electroabsorption Modulator into a GaAs-based Duo-cavity VCSEL for Resonance-free Modulation
J. van Eisden¹, M. Yakimov¹, V. Tokranov¹, E. M. Mohammed², I. A. Young² and S. R. Oktyabrsky¹, ¹SUNY Albany and ²Intel Corporation

17.6

Student Presentation
Process Development and Characteristics of Nano III-V MOSFET
Donald Cheng, Chichih Liao, K. Y. Cheng and Milton Feng, University of Illinois

17.7

Comparative Study of Thermal Mismatch Effects in CdTe/Si CdTe/Ge and CdTe/GaAs Composite Structures
R.N. Jacobs¹, L.A. Almeida¹, J. Markunas¹, J. Pellegrino¹, M. Groenert¹, M. Jaime-Vasquez¹, N. Mahadik², C. Andrews², S.B. Qadri², T. Lee³ and M. Kim³, ¹U.S. Army Research, Night Vision and Electronic Sensors Directorate , ²US Naval Research Laboratory and ³University of Texas

17.8

BCB Etching Process Using High Density Plasma
I.Toledo, R. Adler, Y. Knafo, O.Kalis, and J.Kaplun, Gal-El (MMIC)

17.9

Etching of GaAs in RIE & CAPE Mode – Characterization of Surface Layer
R.K. Bhardwaj¹, S.K. Angra¹, R.P. Bajpai¹, Nirmal Singh² and Lalit M. Bharadwaj¹, ¹Central Scientific Instruments Organization and ²Department of Physics Punjab University

17.10

Galvanic Corrosion of Aluminum in Metal Stacks
D. Eaves, J. Chen, I. Smorchkova, W. Sutton, J. Uyeda, and M. Barsky, Northrop Grumman Space Technology

2:45 PM

CONFERENCE CLOSING RECEPTION
Best Poster Award Presentations
Feedback Form Raffle Drawing

TECHNICAL SESSIONS

PLENARY SESSION (Back to Conference at a Glance)

Chair:

Scott Davis, Sumitomo Electric

A huge percentage of the electronic devices made from compound semiconductors have been used in cellular handsets. Handsets have of course evolved from the early “bricks” into smart phones that pack functionality into two way communication devices that moonlight as cameras and televisions. Bruce Bernhardt of Motorola Mobile Devices has been adding functionality to the handsets we carry and will give us a peek behind the curtain at how this evolution has and will continue to occur. As the complexity of handsets has increased, the demands on electronic devices have changed. The market penetration rates of devices based on specific semiconductor technologies have evolved with the needs of handset functionality, including the use of a single handset for multiple frequencies and standards. Peregrine Semiconductor’s CMOS-on-Sapphire switches have been reportedly gaining market share, particularly in more sophisticated handsets. Dylan Kelly, Peregrine’s Director of Wireless Products, will explain to us how these devices are being deployed and explain the benefits of their solution in handsets relative to other RF front-end technologies. Our trio of handset focused papers will conclude with Curt Barratt, Vice President of Manufacturing for RF Micro Devices, who will discuss the evolution of large scale manufacturing of electronic devices for handset front ends from the early devices to the modules of today.

Our focus will then shift to a trio of papers from the research community – industry, government, and academia. Robert Chau, Intel’s Director of Transistor Research and Nanotechnology, will describe Intel’s vision and strategy for III-V’s on silicon, how they fit into Intel’s future product roadmap, and what challenges need to be overcome to bring that vision to market. We will then hear about integration of silicon and compound semiconductors from a different perspective, as Mark Rosker of DARPA details their COSMOS program. To conclude the session, we will hear from the Dean of the College of Engineering at the University of Illinois Urbana-Champaign. For decades, UIUC has been a source of groundbreaking research and human talent for our industry. Dean Adesida will provide us with his perspective on compound semiconductor materials and devices, contributions from UIUC, and what the future may hold.

SESSION 2: Innovative Electronic Applications (Back to Conference at a Glance)

Chair:

Amy Lui, IQE

The focus of this session is on the innovative use of compound semiconductor and organic materials for electronic applications.

We will lead off with an invited talk by Mariam Sadaka of ColdWatt, Inc. Mariam will discuss the power requirements of next generation portable devices and introduce the "Substrate-driven FET", a novel GaAs pHEMT-based technology, that can be used to realize high efficiency power switching devices. The second invited talk will be given by Michael Shur of Rensselaer Polytechnic Institute. Mike will give an overview on terahertz electronics technologies and address the challenges ahead. Design approaches aiming at drastically increasing efficiency and output power will be discussed. The last invited talk of this session is on flexible electronic foil systems known as "Polytronics" and will be given by Karlheinz Bock of the Fraunhofer Institute. Organic electronics is widely accepted as one of the most important disruptive technologies of recent times. Karlheinz will present an overview of a hybrid hetero-integration approach for polytronics, containing primarily polymer materials with some imprinted technologies that achieves reasonable systems performance and potentially enables a process directly on functional flexible foil substrates.

SESSION 3: OPTO (Back to Conference at a Glance)

Chair:

Tim Bird, Veeco Compound Semiconductor

Optoelectronic applications of compound semiconductors have long been in volume manufacturing. Lasers, LEDs, and photo-detectors of various flavors have found applications on earth and III-V materials grown on germanium circle the planet as solar cells on satellites.

Lower costs and technological improvements in compound semiconductors coupled with rising demand and costs for energy are enabling new markets for optoelectronic applications. Paul Scheidt of Cree will present the latest developments for LEDs in the general illumination market. Then Alex Slade of Amonix will describe how solar concentrator technology affects the viability of high efficiency compound semiconductor photovoltaics for terrestrial applications.

SESSION 4: Process I (Back to Conference at a Glance)

Chairs:

Mike Clausen, RF Micro Devices
Jim Crites, Tyco Electronics

Sessions relating to processing could be considered the bedrock of our technical conference because authors of these papers are generally encountering and solving problems fundamental to the manufacturing capability of their organizations. This session contains presentations which run that gamut of processing heartache from epitaxial growth to wafer dicing (and several interesting steps in between).

The first paper in this session pertains to reduction of process variation by careful assessment of wafer temperature during MBE epitaxial growth. In addition to evaluating the magnitude of the range in temperature from platen to platen as a diagnostic tool, the integration of a temperature measurement system during a run allows for minor correction of temperature set points during layer growth. Using these techniques, a reduction of wafer-to-wafer and on-wafer variation is realized.

Our next paper is a presentation on the application of a photodefinable polybenzoxazole for use as a buffer layer during wafer fabrication. The characteristics of the film allow for planarization, top surface buffering, and scratch protection. A typical process flow and some discussion of environmental and reliability results are also included in the talk.

Second source qualification is our next topic. Here, the primary concern was the compatibility of epi wafers from different sources as feedstock for HBT product lines. But the evaluation and logistical analysis revealed more than just the particulars of different reactors. The authors will also discuss how operational practices, application expectations, and measurement techniques played out in this success story.

Next is a paper discussing the utilization of Chemical Mechanical Polishing (CMP) for RF GaAs devices. Of the various interconnect methodologies available, CMP may have advantages through its ability to planarize device surfaces and the potential for stacked components. The authors of this paper will discuss CMP processing schemes, variables, and results.

Last but not least is the very important topic of die singulation. The authors will share lessons learned in the process of setting up and applying laser dicing techniques. Unexpected problems often result in the most interesting solutions.

SESSION 5: Wide Bandgap Power Amps and Switching (Back to Conference at a Glance)

Chairs:

Andy Souzis, II-VI
Karim Boutros, Teledyne Scientific

SiC and GaN based devices offer greatly enhanced power and high voltage performance for a multitude of current and future military and commercial systems. In our first talk of the session, Cree will present an overview of their commercial status for both SiC and GaN technologies. Data demonstrating SiC MESFETs with MTTF in excess of 2.0E6 hours at Tj = 225°C as well as GaN devices with power densities of up to 25 W/mm will be shown. In our second talk, Toshiba will discuss the use of PL for incoming inspection to measure substrate properties as they relate to device performance in high voltage GaN-based HEMTs. Results indicate a correlation between wafer level PL yellow-to-band-edge (YL/BE) intensity ratio and on-resistance increase caused by current collapse.

Our third presentation is a joint effort by the Fraunhofer Institute, NXP Semiconductors and United Monolithic Semiconductors. AlGaN/GaN HEMTs are fabricated for use in base stations for next generation mobile communications using both e-beam and stepper lithography. Devices are demonstrated with > 160 V gate-drain breakdown and > 60% PAE at 80 V drain bias. Another report on AlGaN/GaN HEMTs from Tyco Electronics describes the development of a power amplifier with 40 W CW at 1.75 GHz, 12.6 dB gain and > 80% drain efficiency. In the last talk of this session, Gal-El demonstrates the use of DOE techniques to evaluate the effect of process parameters on AlGaN HEMT performance.

SESSION 6: Process II (Back to Conference at a Glance)

Chairs:

Andrew Stoltz, US Army Night Vision Laboratory
Jon Abrokwah, Freescale Semiconductor

Processing of compound semiconductors of various kinds are covered in this session. The first paper concerns etching vias in BCB with an ICP tool for HBT technology. The paper is by Hermann Stieglauer et al. from United Monolithic Semiconductors of Ulm, Germany. The challenges of CD control, etch selectivity using photo resist, and SiO2 hard mask and sidewall passivation to realize smooth perpendicular etch profiles with minimal CD loss are discussed.

Paper 2 by Jiro Yota et al. of Skyworks Solutions in Newbury Park describes a new inter-level dielectric for HBT technology – polybenzoxazole (PBO) with excellent mechanical properties, low curing temperature below 250 C, and high compatibility with HBT process.

Suehiro Sugitani et al. of NTT Photonics Laboratories next describe a 4-layer gold interconnect process for InP HEMTs that uses BCB inter-level dielectrics for ILD1, 2, and 3. The authors use CF4/O2 etching for near vertical etch profiles and demonstrate low loss transmission lines with high reliability through use of waffle vias in the pads.

N. Farrington et al. of University of Manchester, UK and e2V Technologies then discuss an on-wafer test system for rapid evaluation of spike doping carrier concentration levels in Gunn diodes for automotive RADAR applications.

P. Kurpas et al. of the Ferdinand Braun Institute in Berlin, Germany, describe the challenges of fabricating 26 V high voltage (HV) HBT power devices, integrated with smaller sized digital devices for on board digital circuits. A high yield, scalable power amp (Power >10 watts and Efficiency >60%) was successfully integrated monolithically with digital circuits containing up to 670 devices.

The last paper in the session is by A. J. Stoltz et al. from the US Army Night Vision Laboratory. This paper concerns the processing of HgCdTe. This paper discusses processes that have been developed to allow HgCdTe to be processed from both sides of the semiconductor wafer. This is particularly difficult to do in HgCdTe as this semiconductor is easily susceptible to damage.

SESSION 7: Emerging Devices (Back to Conference at a Glance)

Chairs:

David Via, Air Force Research Laboratory
Judy Kronwasser, NOVASiC

The Emerging Devices session includes papers addressing methods to improve a variety of nitride-based devices – HEMTs/HFETs, HBTs, and MOSFETs.

The session begins with an invited paper from University of Notre Dame on ultra-thin AlN barrier layers for GaN-based HEMTs. This work looks at reducing parasitics for operation in high-frequency regimes. Next, the Air Force Research Laboratory will present a survey of available sources of InAlN/GaN HEMT structures for high-power, high-frequency devices. This report will discuss materials properties and device performance. Following this, researchers from the University of South Carolina will describe their work on thin InGaN channel and InGaN back-barrier structures. This work seeks to improve channel confinement and mitigate short-channel effects. The next presentation is from North Carolina State University on their E-mode MOSFETs. Epitaxially grown rare earth oxides on GaN will be discussed and material properties described. The final talk of the session will be presented by University of Illinois about process and performance improvements to InGaN/GaN HBTs. Their focus is on finding and implementing a new p-type ohmic contact and reducing damage caused by plasma etching.

SESSION 8: Yield (Back to Conference at a Glance)

Chairs:

Paul Cooke, IQE
Chris Santana, RF Micro Devices

Yield is a ubiquitous metric in the GaAs semiconductor manufacturing industry. Everyone tracks it, but seemingly never has enough. Although covering different technical subject areas, all four papers in this session share the common theme of yield improvement.

The first paper from Oerth et al. relays the improvement strategy deployed at Skyworks Solutions’ PHEMT fabrication facility. Driven by increasing complexity and RF performance requirements of multi-throw switches, the authors cover the approaches taken to ensure a consistent, high yielding process. The second paper from Rivers et al. at TriQuint Oregon describes a more specific case study to improve the yield for new E-FET power amplifiers. Previously unobserved defects were tracked to a rinse process and consequent changes enabled measurable die yield improvement. The third paper from Chou et al. covers a study of a new diamond tool for wafer dicing at WIN Semiconductors. A series of experiments was designed and conducted to determine the optimum scribe and break process. The fourth and final paper covers another defect elimination study, in this case a nitride blister observed during backside via processing. Clausen et al. from Filtronic Compound Semiconductors report a six-sigma methodology that isolated alignment variability as the root cause and enabled corrective action through training and tooling to improve final die yield.

Collectively, all four papers readily demonstrate the benefits of methodical yield analysis and improvements that are routinely sought and required within the GaAs RF MMIC industry.

SESSION 9: Materials Integration (Back to Conference at a Glance)

Chairs:

John Blevins, Air Force Research Laboratory
Ruediger Schreiner, Aixtron

This session reviews the latest progress in hetero-integration of compound semiconductors. UCLA will discuss their use of an exfoliation process to provide substrates with template layers that can be later transferred. Sp3 will highlight recent advances in scaling GaN on silicon-on-diamond (SOD) wafers to 100 mm diameters and will report on the electrical characterization of GaN HEMT devices fabricated on 100 mm SOD wafers. Group4 Laboratories will show that the electrical characteristics of AlGaN/GaN HEMT epitaxial layers on both silicon and diamond remain unchanged during the epitaxial transfer process. Finally, Notre Dame University will report on AlGaAs/GaAs/GaN HBTs formed by wafer fusion.

SESSION 10: Reliability (Back to Conference at a Glance)

Chairs:

Peter Ersland, Tyco Electronics
Mike Sun, Skyworks Solutions

This year’s Reliability Session starts with an invited paper from Block et al. from Northrop Grumman Space Technology. The authors discuss the extensive, multi-faceted reliability assessment they incorporate during the development and production phases of state-of-the-art processes for space and other high reliability applications. The value of this thorough approach is illustrated with examples drawn from the qualification of NGST GaAs HEMT technologies.

Complementing this overview presentation are three papers addressing specific aspects of product reliability assurance: 1) Authors Hamada and Roesch (TriQuint) describe a technique for wafer level testing to rapidly assess changes in material or process on FET reliability, and show the advantages of this technique in reduced test time and cost. 2) The impact of design rules on capacitor reliability are discussed in a paper from Oliver and colleagues at Northrop Grumman Electronic Systems. They are able to show a greater than 100x improvement in capacitor lifetime through the use of appropriate layout rules.

3) Our final paper, again by TriQuint’s Dynamic Duo of Reliability (Roesch and Hamada) presents the use of special test structures to assess the impact of metal liftoff defects on circuit yield and long-term product reliability.

SESSION 11: Measurement Techniques (Back to Conference at a Glance)

Chairs:

Tom Low, Agilent Technologies
Yohei Otoki, Hitachi Cable

This session contains an exciting collection of papers with a common thread that materials properties, from surface traps near the gate to bulk point defects in the substrate play an essential role in determining the DC, time domain, and RF performance of emerging GaN HEMT technologies, so they must be understood to succeed.

The first paper, by Cardiff U. and QinetiQ, presents pulsed Id-Vd trajectories for AlGaN/GaN FETs at various quiescent Vd’s, and interprets these data in terms of RF-DC dispersion driven by electron trapping in the g-d region and the formation of a "virtual gate" which controls Id. The authors support this model using Silvaco simulations of their GaN HEMT, comparing simulations with and without electron trapping at the AlGaN surface in the g-d region.

The second paper is a student paper by N. C. State which examines the surface chemistry (by XPS) and surface roughness (by AFM) when a GaN surface is immersed in two different wet treatments prior to dielectric passivation. The paper demonstrates a 10X reduction in gate leakage of a GaN MISFET when an acid wet prep is used before passivation.

The third paper is by U. Bristol, Qinetiq, and SELEX. It describes advances in the use of time-resolved Raman Spectroscopy to measure FET junction temperature versus time and position in GaN and GaAs HEMTs under pulsed gate bias. An important conclusion is that there is a significant rise in channel temperature in their GaN HEMTs even for the short (~200 ns) gate pulse widths typically used in pulsed I-V measurements in the hopes of eliminating self-heating.

The fourth paper is a student paper by U. of California Irvine describing measurements of the change in electroluminescence intensity from the high field g-d region in GaN HEMTs after off-state Vds bias stress, and interpreting the results in terms of surface charge trapping. The fifth and final paper focuses on the nondestructive resistivity measurement methods that are used to qualify the semi-insulating SiC substrates which are used for high performance GaN based HEMTs. The paper describes a collaborative "round robin" study which produced a body of SiC resistivity data using various nondestructive contactless methods (capacitance, microwave, and eddy current) provided by several equipment manufacturers with data from the more conventional (but destructive) Hall effect method. The goal of the paper is to move toward an industry standard method for reporting SiC substrate resistivity data.

SESSION 12: Devices (Back to Conference at a Glance)

Chairs:

Guoliang Zhou, Skyworks Solutions
Keith Salzman, TriQuint Semiconductos

This session features papers covering a broad range of topics and technologies including the design, simulation, fabrication, and testing aspects of both active and passive devices, including high voltage MESFET MMICs, GaAs pHEMTs, InP DHBT MMICs, and GaAs IPD baluns. The session will start with Tyco Electronics presenting on investigations of fabrication of GaAs MESFETs with source-connected field plates for high voltage MMICs, including sensitivity to critical dimensions, the patterning process for the metallization, and the effect of dielectric encapsulation. Then United Monolithic Semiconductors will present their device simulation results identifying a drain leakage current mechanism of GaAs pHEMTs and the corresponding improvement method.

Freescale Semiconductor will talk about the design and fabrication of a center-tapped, 4:1 impedance transformed balun based on a GaAs Integrated Passive process for application to the 2.4 GHz ISM band. Skyworks Solutions’ paper will focus on the development of a method for data alignment of device characteristics as measured on Process Control Monitors (PCM) with the circuit level performance of adjacent multi-throw switch circuits. Finally, the session will be wrapped up by researchers from the Fraunhofer Institute for Applied Solid State Physics presenting a paper on a manufacturable InP DHBT technology suitable for medium scale mixed-signal and monolithic microwave integrated circuits.

SESSION 13: GaN Processing (Back to Conference at a Glance)

Chairs:

Victoria Williams, TriQuint Semiconductor
Robert Sadler, Northrop Grumman

This session highlights some significant new developments in GaN processing, with a particular focus on surface treatments and passivation. The session starts with a paper by T. Ohki et al. from Fujitsu, who have demonstrated reduced gate leakage current in an AlGaN/GaN HEMT by insertion of a NiOx layer between the gate edge and the passivation layer, preventing formation of a Ni silicide. Then a student paper by A. Basu et al. from the University of Illinois describes the fabrication of a 0.25-µm AlGaN/GaN enhancement-mode HEMT produced using a fluorine plasma treatment without gate recess. This is followed by a study of a generic surface treatment for III-N device fabrication using aqueous potassium hydroxide catalyzed by UV illumination, reported by Y. Zhang and coworkers at the Georgia Institute of Technology. Next, a comprehensive study of plasma surface treatments before silicon nitride surface passivation and the effects of these treatments on a number of dc and RF parameters are detailed in a student paper by D. Meyer et al. from Pennsylvania State University. The session concludes with a paper by K. Takatani and coworkers at Sharp Corporation, reporting a new AlGaN/GaN field-effect Schottky diode with zero-volt turn-on voltage, enabled by using a CF4-based fluoride plasma surface treatment.

RUMP SESSIONS (Back to Conference at a Glance)

Chair:

Pat Fowler, Anadigics

Don't miss one of the annual highlights of MANTECH! Come and join in spirited discussions of gut level issues at the Rump Sessions. While sharing heartfelt (sometimes data driven) opinions, gain an appreciation for your peers working at competitors and discover the commonality of our problems. Join in one and stay engaged, or move from one session to another – have fun, learn, and share! This year the choices are:

1. Will Silicon Replace GaAs? Is the wolf really coming? Moderator: Mike Sun, Skyworks Solutions

2. The Decline & Fall of Western Civilization: World leadership in technology is shifting – who leads what? How (and how fast) is that changing? Moderator: Alex Smith, Brewer Science

3. High Voltage Technology: GaN has its merits, but is far from the only high voltage option. Can high voltage MESFETs, HBTs and pHEMTs compete?

Moderator: Peter Ersland, Tyco Electronics

4. Fab-u-less or Not: Will the future belong to the fabless, fab light or the fab few? Making money and other reasons (are there any?) to decide.

Moderator: Oded Tal, Max IEG

SESSION 14: Devices and Circuit Technology (Back to Conference at a Glance)

Chair:

Karlheinz Bock, Fraunhofer Institute

The session begins with an invited paper from Brian Moser of RF Micro Devices entitled “An InGaP/GaAs HBT/JFET BiFET Technology for PA Bias Circuit Applications.” A BiFET process technology has been developed that enables PA bias circuit designs that can be operated with lower voltage reference (Vref) or no voltage reference as compared to HBT-only processes. This new design flexibility is added to an existing HBT process without adding significant cost, adding process complexity, or trading off HBT performance.

In the next part of the session two papers from the University of Illinois at Urbana-Champaign will be presented. The first is by William Snodgrass et al. and is entitled “Nano-scale Type-II InP/GaAsSb DHBTs to Reach THz Cutoff Frequencies.” Through several generations of vertical scaling and energy band engineering, they have demonstrated InP/InGaAs SHBTs with cut-off frequencies as high as 765 GHz. The resulting scaling and carrier transport models developed show that the current ~0.25 μm InP HBT scaling generation can deliver fT or fMAX approaching 1 THz although balanced device performance is limited to simultaneous fT and fMAX of “only” 600 GHz.

The second paper from UIUC is presented by Mark Stuenckel with the title “The Development of a Symbolically Defined Large Signal InP/GaAsSb Type-II DHBT Model for High Speed Mixed Signal Circuit Simulation.” In this paper they present the SDD Type-II model, a large signal InP/GaAsSb type-II model developed at the University of Illinois, and they compare it to both the VBIC and Agilent models. Their model is implemented as a symbolically defined device in Agilent’s Advanced Design System (ADS), and is based on the well established UIUC SDD type-I InP/InGaAs model, but has been altered to model the different charge transport phenomena that occur in type-II devices.

The session is closed by a presentation on thermal management by Randy Sandhu from Northrop Grumman Space Technology, with the title “Thermal Management for 3-D Integrated Millimeter Wave RF Circuits Architectures”. In this paper 3-D integrated multilayer circuits with passive and active heat removal test structures were employed to characterize vertical and horizontal heat removal to calibrate and validate advanced thermal analysis models. The results from 4 layer 1.6 x 1.6 x 0.35 mm3 passive multilayer heat removal structures are presented and demonstrate less than 36 ºC/W rise for the compact wafer scale integrated thermal test cell.

SESSION 15: Manufacturing (Back to Conference at a Glance)

Chairs:

Andreas Eisenbach, IQE
Paul Werbaneth, Tegal

Manufacturing excellence (and concerns) are at the very core of CS Mantech and should be close to the heart of all attendees. The presentations in this session from two of the major players in the compound semiconductor industry, TriQuint Semiconductor and Skyworks Solutions, cover several different aspects of how to squeeze every last bit of manufacturing efficiency from modern compound semiconductor wafer fabs. With one eye always on silicon technology, today’s big compound semiconductor device makers are ever mindful of the need for keeping yields up and manufacturing costs down.

A paper from TriQuint tells us about the bright future for GaAs foundries, owing to an ever-growing market for handset components due to commercialization of new technologies, but also due to a more compelling business model, including price advantages when compared to silicon, for GaAs-based devices. In the second paper from TriQuint we will share the lessons learned from TriQuint’s migration to the paperless runsheet world, which has resulted in the benefits of seeing operator errors reduced to all-time lows, and of seeing a dramatic reduction in wafers scrapped in-line, compared to the paper-based runsheet era of yore.

For those who thought the benefits of implementing Factory Automation would be realized only as a decrease in wafer misprocessing, the third paper in the session, by Skyworks Solutions, will show how implementing an FA system improves yields, improves the understanding of process equipment utilization and preventative maintenance scheduling, and improves the usage efficiency of the expensive precious metals and chemicals used in compound semiconductor wafer fabs. The session concludes with TriQuint’s paper on RF module assembly, providing an overview of different assembly processes and techniques, and reminding us that the benefits of understanding the assembly process are not limited to packaging and assembly engineers, but apply to all those who have a hand in compound semiconductor component fabrication and deployment.

SESSION 16: An Hour with the Analysts (Back to Conference at a Glance)

Chair:

Drew Hanser, Kyma

This session will provide insight into trends and outlooks for three different markets and industries serviced by compound semiconductors and competing technologies. We will first hear from Earl J. Lum who will try to find clarity and order on the wireless road in “The Wireless Industry: Entering a State of Confusion and Chaos.” Next, Dr. Philippe Roussel will examine market applications, players, and trends for silicon carbide in “Status of the SiC Power Devices Market.” Concluding the session, Asif Anwar will take a close look at silicon and GaAs and ask, “Are Silicon Technologies Poised to Displace GaAs?” Please join us for insightful analysis and discussion over lunch.

SESSION 17: Interactive Forum (Back to Conference at a Glance)

Chairs:

Suzanne Combe, TriQuint Semiconductor
Alex Smith, Brewer Science

A primary goal of the MANTECH conference is to encourage open discussion and the free exchange of ideas among conference participants. An integral part of the conference since 1994, the Interactive Forum presents an opportunity for informal discussions and face-to-face meetings between authors and participants. During the forum, the authors of all presented papers are available to discuss their results in more detail and to answer questions. In addition, there are a number of papers available for review only during the Interactive Forum. This provides a time for conference participants to view and discuss these papers as well.

Authors from Sessions 1 through 8 will be available during the first 45 minutes of the Interactive Forum, while authors from Sessions 9 through 16 will be available during the second hour of the session. Authors from the “interactive-only” session, Session 17, will be available during the entire forum. Food and drinks will be provided. At the end of the session votes will be tallied and the Best Poster winner will be announced and awarded in the Conference Closing Reception. The 2008 International Conference on Compound Semiconductor Manufacturing Technology encourages all participants to attend the Interactive Forum, participate in the discussions, and enjoy the refreshments!

For Advanced Conference Registration, complete the enclosed Registration Form at the end of this Advance Program and return with payment by March 21 to:

CS MANTECH Conference
c/o Lucky Gold Co.
4126 Crescent Drive
St. Louis, MO, USA 63129
Phone:    (314) 894-0080
Fax:         (314) 894-0450
Email:      LLLCPA@aol.com

Or register for the conference online at our Web Site at: www.csmantech.org

Conference registration will open in front of the Ravinia Ballroom area just off the hotel lobby of the Westin Chicago North Shore on Monday morning and will be open through Thursday during the following hours:

A Conference Attendee list will be available at the Information Center on Thursday, April 17^th.

TRANSPORTATION TO THE HOTEL

From Downtown Chicago: Take Interstate 90 West to 294 North towards Milwaukee. Take the Lake Cook Road exit. Turn left onto Lake Cook Road heading west. Stay to right and exit at Milwaukee Avenue. Turn left onto US 45/Illinois 21/Milwaukee Avenue. Turn left at Wolf Road into hotel parking lot.

From North: Take Interstate 94 East/294 South towards Chicago and exit at Lake Cook Road. Turn Right onto Lake Cook Road heading west. Stay to right and exit at Milwaukee Avenue. Turn left onto US 45/Illinois 21/Milwaukee Avenue. Turn left at Wolf Road into hotel parking lot.

From South: Take Interstate 294 North towards Milwaukee. Take the Lake Cook Road exit. Turn left onto Lake Cook Road heading west. Stay to right and exit at Milwaukee Avenue. Turn left onto US 45/Illinois 21/Milwaukee Avenue. Turn left at Wolf Road.

Total $______

Early Conference/Workshop Registration Cutoff Date
March 21, 2008

For Advanced Conference Registration, complete the enclosed Registration Form at the end of this Advance Program and return with payment by March 21 to:

CS MANTECH Conference c/o Lucky Gold Co. 4126 Crescent Drive St. Louis, MO, USA 63129 Phone: (314) 894-0080 Fax: (314) 894-0450 Email: LLLCPA@aol.com

Or register for the conference online at our Web Site at: www.csmantech.org

Conference registration will open in front of the Ravinia Ballroom area just off the hotel lobby of the Westin Chicago North Shore on Monday morning and will be open through Thursday during the following hours:

A Conference Attendee list will be available at the Information Center on Thursday, April 17th.

TRANSPORTATION TO THE HOTEL

From Downtown Chicago: Take Interstate 90 West to 294 North towards Milwaukee. Take the Lake Cook Road exit. Turn left onto Lake Cook Road heading west. Stay to right and exit at Milwaukee Avenue. Turn left onto US 45/Illinois 21/Milwaukee Avenue. Turn left at Wolf Road into hotel parking lot.

From North: Take Interstate 94 East/294 South towards Chicago and exit at Lake Cook Road. Turn Right onto Lake Cook Road heading west. Stay to right and exit at Milwaukee Avenue. Turn left onto US 45/Illinois 21/Milwaukee Avenue. Turn left at Wolf Road into hotel parking lot.

From South: Take Interstate 294 North towards Milwaukee. Take the Lake Cook Road exit. Turn left onto Lake Cook Road heading west. Stay to right and exit at Milwaukee Avenue. Turn left onto US 45/Illinois 21/Milwaukee Avenue. Turn left at Wolf Road.

Total $______

Early Conference/Workshop Registration Cutoff Date March 21, 2008

CS MANTECH Conference
c/o Lucky Gold Co.
4126 Crescent Drive
St. Louis, MO, USA 63129
Phone: (314) 894-0080
Fax: (314) 894-0450
Email: LLLCPA@aol.com

A Conference Attendee list will be available at the Information Center on Thursday, April 17^th.

Early Conference/Workshop Registration Cutoff Date
March 21, 2008