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The sessions will be presented on Monday May 14
by industry and university experts who have a wealth of
knowledge and hands-on experience. You will improve your
industry outlook and basic understanding of important items in
various fields. Parallel sessions will be offered, covering a
wide range of topics including semiconductor device space flight
qualification, wide-bandgap processing, characterization,
simulation and even intellectual property management. The
workshop schedule can be found on page 17 of this Advance
Program.
The first session will begin with “Surface and
Thin Film Analysis for Compound Semiconductors” by Dr. Yumin Gao
of Evans Analytical Group. This workshop will present many
commonly used surface and thin film analytical techniques (SIMS,
TOF-SIMS, RBS, Auger, XPS/ESCA, LEXES, TXRF, Raman/FTIR etc) and
their applications in the compound semiconductors industry.
After providing background knowledge of these techniques such as
principle instrumentation and analytical conditions, Dr. Gao
will describe their applications in materials research, process
development, failure analysis, and production quality control
through numerous examples in the areas of pHEMTs, HBTs, LEDs and
LDs (GaAs, InP, GaN and SiC). This tutorial will increase your
knowledge of analytical methods and your understanding of how
these techniques can be applied most effectively to your
specific problem solving and will provide a starting point for
your further study.
Next, “Space Qualification for Semiconductor Devices” will be
explained by Dr. Sammy Kayali of the NASA Jet Propulsion Lab.
His tutorial will begin with a description of the environmental,
reliability, and operational challenges for space applications.
A description of space qualification requirements and associated
product testing and evaluation will be presented. Semiconductor
device processing, test, and characterization requirements along
with supporting data and application support will also be
presented. To finish, Dr. Kayali will review practical
considerations for development of qualification plans for space
applications.
Then, by popular demand, Mr. Harvey Kauget will tell us all
about the part of our business that scientists and engineers
rarely understand. In “Intellectual Property: Know How and
Why,” Mr. Kauget will provide an overview of the basic forms of
IP, developing an IP strategy, IP licensing and IP litigation
issues. You will learn how to recognize and develop IP, and you
will understand the issues of enforcing and/or licensing your
IP.
In
a parallel session with the above topics, three other highly
interesting topics will be covered. First, Professor M. Kalam
of the University of Texas at Dallas will describe in detail
“High-Speed, Next-Generation Networks and the Role of the
Semiconductor Industry”. His workshop will begin with a
background of various types of data and telecommunications
networks and their evolution. The current networking
technologies and the future trends will be discussed in detail.
The contributions of the semiconductor industry in developing
networking technologies will be elaborated. Dr. Kalam will
discuss the close relationships that exist between the
semiconductor industry and the networks of the future.
Following optical networks, there will be two
wide-bandgap-related workshops. First, “Application of MOS
Technology to Silicon Carbide Devices” will be presented by Dr.
Mrinal Das of Cree, Inc. Silicon carbide (SiC) stands unique
amongst the family of wide bandgap semiconductors due to the
presence of a high quality, native oxide. Formed via thermal
oxidation, this silicon dioxide layer opens the door to the vast
legacy of MOS devices successfully developed on silicon (e.g.,
MOSFETs, DMOSFETs, UMOSFETs, LDMOSFETs, IGBTs, CCDs, DRAM, and
CMOS circuitry). This workshop will cover the MOS fundamentals
(kinetics, process technology, and characterization), including
the pitfalls of simple application of Si MOS characterization to
wide bandgap materials. Following this, Dr. Das will survey the
historical progress and future potential of MOS-based silicon
carbide devices to revolutionize power and microwave
electronics.
Next, Professors Jim Cooper, Jr. and Mike Capano of Purdue
University will survey silicon carbide material processing and
high-voltage device design using a historical perspective. They
will review the materials challenges involved in the fabrication
of electronic devices in the wide-bandgap semiconductor silicon
carbide. Complex fabrication issues include ion implantation
and activation, thermal oxidation, MOS properties, and the
formation of Ohmic contacts. Material issues include defects
and dislocations in epitaxial material, control of doping and
surface morphology during epi growth, and point defects that
limit the minority carrier lifetime. The payoff is new classes
of circuits that can be fabricated with SiC unipolar and bipolar
devices.
To complete the workshop with a non-parallel
session, Olin Hartin of Freescale Semiconductor will greatly
increase our understanding of “TCAD Simulation of Compound
Semiconductor Electronic Devices”. This workshop will begin with
a review of the fundamentals of TCAD simulation and available
tools. Then, there will also be a discussion of what to do
prior to initiation of a simulation project and what to (and not
to) expect. This will be followed by a brief overview of
processing concepts as they relate to process simulation. There
will then be a detailed discussion of process and device
simulation of FETs and Bipolars. In this discussion,
significant attention will be paid to calibration and what that
really means. Finally, there will be some discussion of large
signal simulation. Some special topics like design for
manufacturing (DFM) may be discussed, time permitting.
Please see our website,
www.csmantech.org for
more information. The Workshop Registration fee covers all
workshops. Except for student registration, the Workshop is
not included in the Conference Registration Fee.
Monday, May 14
WORKSHOP
Chair: Scott Sheppard, Cree, Inc.
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8:00 AM |
Welcome/Introductions |
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8:15 AM |
Surface and Thin Film Analysis for Compound
Semiconductors
Yumin Gao, Evans Analytical Group |
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OR |
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8:15 AM |
High-Speed, Next-Generation Networks and the
Role of the Semiconductor Industry
Professor M. Kalam, University of Texas at
Dallas
|
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10:00 AM |
BREAK
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10:15 AM |
Space Qualification for Semiconductor Devices
Sammy Kayali, NASA Jet Propulsion Lab |
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OR |
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10:15 AM
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Application of MOS Technology
to Silicon Carbide Devices
Mrinal Das, Cree, Inc. |
|
12:00 PM |
WORKSHOP LUNCH |
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1:15 PM |
Intellectual Property: Know How and Why
Harvey Kauget, Phelps Dunbar, LLP |
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OR |
|
1:15 PM |
Silicon Carbide Material, Processing and
Device Historical Overview
Professor Jim Cooper, Jr. and Mike Capano,
Purdue University |
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3:00 PM |
BREAK |
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3:15 PM |
TCAD Simulation of Compound Semiconductor
Electronic Devices
Olin Hartin, Freescale Semiconductor |
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5:00 PM |
WORKSHOP CLOSE |
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