Solution to the E-beam Gate Resist Blistering Problem of 0.15 micron PHEMTs

The International Conference on
Compound Semiconductor Manufacturing Technology

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P A P E R T I T L E

Solution to the E-beam Gate Resist Blistering Problem of 0.15 micron PHEMTs

A U T H O R / C R E D I T S

Y.C. Pao, K. Tran, C. Shih, N. Hardy
Filtronic Solid State, Inc., 3251 Olcott Street, Santa Clara, CA 95054

A B S T R A C T

In this paper we report a simple solution to the E-beam gate resist blistering problem encountered during the Ti/Pt/Au metallization. This has been one of the major yield concerns when manufacturing quarter micron or sub quarter micron PHEMTs. A free space screening method has been successfully used to eliminate the PMMA based E-beam resist blisters during the gate metal deposition process.

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