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Comparison of Metamorphic InGaAs/InAlAs HEMT's on GaAs with InP based LM HEMT's
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Process Monitoring for Nitride Dielectric Defect Density
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Optimized Planning and Operation of High Volume GaAs Epi-Wafer Manufacturing Facility
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InP HBT Production Technology for 100 Gbps Lightwave Communications
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The Reactive Ion Etching of Au on GaAs Substrates in a High Density Plasma Etch Reactor
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Wax Mounting, Backlapping and Chemo-Mechanical Polishing of 150mm (6 Inch) GaAs Wafers.
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Alternate Backside Thinning of GaAs-Based Devices
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0.1 µm InGaAs/InAlAs/InP HEMT Production Process for High Performance and High Volume MMW Applications
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In0.5Ga0.5P Etch-Stop Process for PHEMT Manufacturing
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18 |
Accelerated Lifetests for High-Speed 0.5-µm InGaAs PHEMT Switches
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19 |
Characterizing Fabrication Process Induced Effects in Deep Submicron PHEMT's Using Spectrally Resolved Light Emission Imaging
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A Two Step Polyimide Etchback for Integration of Heterojunction Bipolar Transistors and Resonant Tunneling Diodes
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25 |
Suppression of Anomalous Electrochemical Etching by Reducing Dissolved Oxygen in Deionized Water for HEMT Process
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26 |
Electrochemical Etching in the Fabrication of Short Gate-Length InAlAs/InGaAs Heterojunction FETs
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27 |
Hydrogen-related Issues in GaAs Schottky Contacts
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28 |
Material and Processing Technology for Manufacturing of High Speed, High Reliability GaInP/GaAs HBT based IC's
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Effects of Selective Gate Recess Etching on the Static and Microwave Properties of InGaP/InGaAs PHEMTs
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31 |
MBE Production of HEMT Material for Commercial Applications
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32 |
economic Justification of a 6" GaAs Wafer Fab
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33 |
Process Simulation and Fabrication of Power Heterojunction Bipolar Transistors
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Manufacturable In0.8Ga0.2P/In0.53Ga0.47As/InP Doped-channel HFETs with fT and fmax over 170 GHz
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Very high Performance and Reliable 60GHz GaAs PHEMT MMIC Technology
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The Effects of Feedback Capacitance on Thermally Shunted Heterojunction Bipolar Transistor's Linearity
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42 |
HBT vs. PHEMT vs. MESFET: What's best and why
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44 |
A Product Engineering Exercise in 6-Sigma Manufacturability: Redesign of a PHEMT Wide-Band LNA
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45 |
Testing Radiation damage in III-V Transistors
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46 |
Heterostructure Device Wafer Manufacturing for Telecom Applications for 4" and 6" Wafer Fabs
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47 |
Effects of Ballast Resistors on Power and ESD Performance in AlGaAs/GaAs Heterojunction Bipolar Transistors
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48 |
The Future Potential
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51 |
An Efficient On-Wafer Production Test System for MMW Power MMICs with Diagnostic Flag Capability
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53 |
Packaging of Ultra-Thin Film GaAs Devices for Increased Thermal Efficiency and High Density MCM's
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54 |
Solution to the E-beam Gate Resist Blistering Problem of 0.15 micron PHEMTs
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55 |
Dry Etching Process in InP Gunn Device Technology Utilizing Inductively Coupled Plasma (ICP)
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56 |
Key Considerations and New Advances in High Volume Production for Millimeter-wave MMICs
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57 |
Transfer and Qualification of a Layout-Compatible Second Source HBT Technology for Mobile Phone Applications
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58 |
Model Development for Image Reversal Resist Lithography
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59 |
GaAs MESFET, HEMT and HBT Competition with Advanced Si RF Technologies
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The Siemens 150mm GaAs Production Facility
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61 |
Deflection Mapping is Useful for its Ability to Identify Distortion-prone GaAs Wafers
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63 |
Gate Metallization Study for InGaP/InGaAs/GaAs pHEMTs
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64 |
Practical Approaches to Remediation of Hydrogen Poisoning in GaAs Devices
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65 |
Characterization and Control of Epitaxial Material for HBT Manufacturing
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Properties of 6-inch Semi-insulating GaAs Substrates Manufactured by Vertical Boat Method
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A Study on PtGeAu Thin Ohmic Contact for GaAs PHEMT
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71 |
Progress in SiC Materials and Microwave Devices
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72 |
Status and Application of Advanced Semiconductor Technologies
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Improved Manufacturability Methods for a High Volume, PHEMT Based, Ku-Band Power Module for VSAT Applications.
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A GaAs Fab's Approach to Design for Manufacturability
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75 |
Manufacturable AlGaAs/GaAs HBT Implant Isolation Process Using Doubly Charged Helium
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76 |
GaAs Heterojunction Bipolar Transistor Emitter Design
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77 |
A Design of Experiments Approach to BCB Etch Uniformity Improvements
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78 |
Preparing Polished Cross Sections Of III-V Devices For The SEM
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