Germanium Devices: Hybrid Integration and Substrate Removal
 
R. Vandersmissen1 , K. van der Zanden2 , D. Schreurs1 and G. Borghs3
IMEC, MCP/NM
1 Also with the E.E. Dept. of K.U.Leuven
2 Currently at Infineon Technologies
3 Also with the Physics Dept. of K.U.Leuven

In this paper we present a new technique for the hybrid integration of thin-film Metamorphic HEMTs grown on Germanium. Substrate removal is essential in this process, both to improve the performance of the devices and to facilitate the integration.