Conference

The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2002 On-line Digest Table of Contents

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1a	2002: The Market in Transition Earl Lum. CIBC	Abstract
1b	Overview of Emerging Compound Semiconducator Technologies Keith Buchanan, Trikon Technologies	Abstract not available
1c	The Evolution of Interconnect Technology for Silicon Integrated Circuitry Keith Buchanan, Trikon Technologies	Abstract
2a	Development of Circuits in Indium Phosphide for Communication at 40Gbit/s and Above Alan D. Huelsman, Vitesse Semiconductor	Abstract
2b	InP and GaAs Components for 40 Gbps Applications Mansoor Siddiqui, Greg Chao, Aaron Ohi, Augusto Guitierrez-Airken, Barry A;llen, Alex Chau, Wendell Beall, Matt D'Amore, Bret Oyama, Dennis Hall, Richard Lai and Dwight Streit, Velocium	Abstract
2c	Performance of InP/InGaAs Heterojunction Bipolar Transistors for 40 Gb/s OEICApplications Shyh-Chiang Shen, David C. Caruth & Milton Feng, Xindium Technologies & University of Illinois	Abstract
2d	Manufacturable Commercial 4-inch InP HBT Device Technology N. X. Nguyen, J. Fierro, G. Peng, A. Ly, and C. Nguyen, GCS	Abstract
2e	A Non-Self Aligned InP HBT Production Process Mike Sun, Juntao Hu, Wu-Jing Ho, Gary Hu, Jiang Li, Vicki Weng, Wei-Ming Xu, June Nguyen, Chang-Hwang Hua and Ding Day, Alpha Industries	Abstract
3a	Accelerated Reliability Testing of GaAs/InGaP HBTs Bob Surridge, Jeff Law, Brian Oliver, Wojciech Pakulski, Heidi Strackholder, Michel Abou-Khalil and Guy Bonneville, Nortel Networks Optical Components	Abstract
3b	Wafer-Level Reliability Tests of InGaP HBTs Using High Current Stress Frank H.F. Chau, Chien-Ping Lee, Clarence Dunnrowicz and Barry Lin, EiC Corporation	Abstract
3c	Failure analysis of electrostatic discharge in InGaAs/AlGaAs PHEMTs Chiharu Nozaki, Masanori Ochi, Yoshitomo Sagae, Takao Noda, Yoshiaki Kitaura, Toshiba	Abstract not available
3d	A Power Law Model for Assessment of Hot Electron Reliability in GaAs MESFETs and AlGaAs/InGaAs pHEMTs Val Kaper, Peter Ersland, M/A – COM	Abstract
3e	Reliability Study of Low-Voltage RF MEMS Switches D. Becher, R. Chan, M. Hattendorf, M. Feng, Univ. of Illinois	Abstract
4a	2nd Generation Device Modeling for MMIC Design and Manufacturability R. Tsai, M. Nishimoto, W. Akiyama, J. Chang, D. Ko, A. Schiaroli, R. To, L. Tran, M. Truong, K.H. Yen, and R. Lai, TRW	Abstract
4b	New method to monitor the frequency-dispersion in InGaAs/AlGaAs PHEMTs T. Izumi, T. Ohshima, M. Tsunotani and T. Kimura, Oki Electric	Abstract
4c	Nondestructive Characterization of epitaxial structure for High Electron Mobility Transistors Mikhail K Mikhov, Eric S. Johnson, Celicia Della, Brian J.Skromme, Ellen Lan, Mark Rittgers, Mike Pelczynski, Motorola & Arizona State Univ.	Abstract
4d	Contactless Electron Mobility Evaluation of Semi-Insulating GaAs and InP Wafers Rudolf Stibal, Ulrich Kretzer and Wolfgang Jantz, Fraunhofer Institut & Freiberger	Abstract
4e	6 Inch GaAs Fab Conversion Cost Effectiveness Evaluation Process Ariel Meyuhas, MAX International	Abstract
5a	Dielectrically defined optical T-gate for high power GaAs pHEMT D. Fanning, L. Witkowski, J. Stidham, H.-Q. Tserng, M. Muir & P. Saunier, TriQuint Semiconductors	Abstract
5b	Effect of Intentional Surface Oxidization on Power Performance in Planer Type AlGaAs/GaAs MESFET T. Kagiyama, Y. Saito, K. Otobe, S. Nakajima, Sumitomo Electric.	Abstract
5c	Novel Nitride Passivation on 0.15um Pseudomorphic GaAs HEMTs Using High-Density Inductively Coupled Plasma CVD (HD-ICVD) Y.C. Chou, R.Lai, C.P.Li, Peter Nam, H.K. Kim, Y. Ra, R. Grundbacher, E. Alers, M. Barsky, M. Biedenbender, A. Oki, TRW., Bethel Materials Research & UC, Irvine.	Abstract
5d	Damage Free Etching for Gate Process of GaAs MESFET by ICP Method Y. Tosaka, S. Nakajima, Sumitomo Electric	Abstract
5e	A highly Uniform and High Throughput, Double Selective pHEMT Process Using an All Wet Etch Chemistry Kamal Alavi, Serap Ogut, Peter Lyman, William Hoke, Mike Borkowski, Raytheon RF Components Company	Abstract
6a	Benefits and Challenges in Decreasing GaAs Through Substrate Via Size and Die Thickness Henry Hendriks, Allen Hanson, Thomas Lepkowski, Anthony Quaglietta, Bharat Patel, M/A - COM: Tyco Electronics	Abstract
6b	A New Alternative for Temporary Wafer Mounting David J. Mould, John C. Moore, Motorola & General Chemical Corporation	Abstract
6c	Capability and Cycle Time Improvements in Nortel Network’s Substrate Via Fab D. Bonneau, P. Borkowski, R. Shelley, A. Fortier, M. C. Young, C. Fragos, S. Anderson, Nortel Networks Optical Components & Trikon Technologies Ltd.	Abstract
6d	Through Substrate Via Etching and Cleaning for High Volume Production Demands Keri L. Costello, Carolina S. Rios-Wasson, Terry K. Daly, John C. Moore, Motorola & General Chemical Corporation	Abstract
6e	Characterization of a Manufacturable High Rate GaAs Via Etch Process F. Clayton, R. Westerman, and D. Johnson, Unaxis USA, Inc. & Motorola InC.	Abstract
7a	Implanted MESFETs – Still Going Strong Martin J. Brophy, Richard L. Campbell and William Davenport, TriQuint Semiconductors	Abstract
7b	Manufacturable GaAs High Power FET for W-CDMA Base Station E. Mitani, H. Takahashi, H. Haematsu, K. Inoue, K. Ebihara and J. Fukaya, Fujitsu	Abstract
7c	Wide Bandgap Semiconductors: Moving from Research to Production John Zolper, DARPA/MTO	Abstract
7d	GaAs pHEMT Technology for Optical Communication System Tamotsu Kimura, Tomoyuki Ohshima, Masanori Tsunotani, Toshikiko Ichioka and Shohei Seki, Oki Electric Industry	Abstract
7e	Manufacturable 0.15 um PHEMT Process for High Volume and Low Cost on 6” GaAs Substrates: The First 0.15 um PHEMT 6”GaAs Foundry Fab M. Chertouk, D. W. Tu, P. Meng, C. G. Yuan, W. D. Chang, C. Y. Kuo, C. C. Chang, A. Chang, H. H. Chen, P. C. Chao, WIN Semiconductors	Abstract
8a	Silicon Nitride MIM Capacitor Reliability for Multiple Dielectric Thickness John Beall, Ken Decker, Keith Salzman, and Gergana Drandova, TriQuint Seiconductors	Abstract
8b	Polarization Behavior of GaAs in Electrolyte Solutions Y. Huang, J.L. Luo, D.G. Ivey, University of Alberta	Abstract
8c	Multipulse Electroplating of Au/Sn Alloys onto Patterned Wafers for Packaging Applications A.He, D.G. Ivey, S. Akhlaghi, University of Alberta	Abstract
8d	Using Neural Networks for RHEED Modeling of Interfaces in AlGaSb-InAs HEMT Devices Gregory E. Triplett, Gary S. May, April S. Brown, Georgia Institute of Technology	Abstract
8e	Prediction of Maximum Temperature Rise in Multi-Finger Transistor Structures using Normalization David J. Walkey, Dritan Celo, Tom J. Smy, Carleton University	Abstract
8f	Moiré Interferometry for Microelectronics Packaging Interface Fatigue Reliability Heng Liu, A.N. Cartwright, Cemal Basaran, University of Buffalo	Abstract
8g	Ultrafast Spectroscopy of InGaN Quantum Wells for the Development of Efficient Emitters Fei Chen, M.C. Cheung, A.N. Cartwright, Paul M. Sweeney, Jeffrey S. Flynn & David Keogh, University of Buffalo & ATMI Inc.	Abstract
8h	Active Laser Device Characterization by Scanning Capacitance Microscopy M. W. Xu, N. Duhayon, W. Vandervorst, Catholic Univ. of Leuven. IMec	Abstract
8i	Direct Observation of Gain Collapse Phenomena in Multi-Finger HBTs Using Digital Cameras Toru Sugiyama, Yorito Kakiuchi, Kouhei Morizuka, Yoshiaki Kitaura, Toshiba Corp	Abstract
8j	Characterization of Electrochemically Deposited Gold for Back-Side Processing of GaAs Wafers Erik Young, Henry Hendriks, Gabriel Rojano, Rajesh Baskaren, Tom Ritzdorf, John Klocke, Semitool Inc. & M/A-Com: Tyco Electronics	Abstract
8k	Cutting GaAs Devices Without Blade Dressing Zi Qing (Tony) Wang, Motorola	Abstract
8l	In-line Optical and X-ray Measurements of Thickness and Composition for Manufacturing of Heterostructure Bipolar Transistors Stefan Zollner, Mariam G. Sadaka, N.V. Edwards, Candi S. Cook, Q. Xie, Ha T. Le, Jill Hildreth, and Andrew S.Morton, Motorola	Abstract
8m	In-Situ Optical Thickness Control of Ion Beam Deposited Coatings for the Telecommunications Industry Adrian J. Devasahayam, Ivo Agatic, Adrian Celaru, Warren Cheesman, Boris Druz, Roger Fremgen and Hari Hegde, Veeco Instruments	Abstract
8n	Simple Process for 0.5um Lift-off Applications in the GaAs and MEMS Industries Medhat Toukhy, Salem Mullen, Ping-Hung Lu, Gregg Espin, Jeff Griffin. David Maurer, Clariant Corporation & Motorola	Abstract
10a	III-V MOVPE for RF power applications Peter Frijlink, OMMIC	Abstract
10b	High Performance AlGaN/GaN HEMTs on Semi-Insulating SiC Substrates Grown by Metalorganic Chemical Vapor Deposition Michael M. Wong, Delphine Sicault, Uttiya Chowdhury, Jonathan C. Denyszyn, Ting Gang Zhu and Russell D. Dupuis and David T. Becker & Milton Feng, University of Texas & The University of Illinois	Abstract
10c	4" InP based HEMT epitaxial wafers grown by MOVPE for volume production Hajime Momoi, Koji Kakuta, Eiji Ikeda and Hirofumi Nakata, Nikko Materials.	Abstract
10d	Base Layer Band Gap Engineering for III-V Bipolar Devices P. M. DeLuca, C. R. Lutz, B. E. Landini, M. Chaplin, K. S. Stevens and R. E. Welser, Kopin Corporation	Abstract
10e	High Volume Manufacturing of InGaP/GaAs HBT Wafers J. Silver, P. Cooke, E. Armour, S. Ting, L. Kapitan, M. Ferreira, D. Tilli, C. Palmer, Emcore Electronic Materials	Abstract
11a	Introduction of Complete Sputtering Metallization in Conjunction with Dry CO₂ Snow Lift-Off for High Volume GaAs Manufacturing Fabian Radulescu, Paul Miller, Liam Cunnane, Mark Harris, Hien Lam, Charles Bowers, TriQuint Semiconductor & Trikon Technologies & eco Snow Systems.	Abstract
11b	Methods for Monitoring Passivation Ledges in a Manufacturing Environment P.J. Zampardi, Lance Rushing, Pingxi Ma, and M.F. Chang, Conexant Systems & UCLA	Abstract
11c	Film Stress versus Plating Rate for Pulse-Plated Gold P.H. Lawyer and C.H. Fields, HRL Laboratories	Abstract
11d	Low Cost, High Throughput Hot Plate Track System Used in 150 mm GaAs Ohmic Metal Alloying Moreen Minkoff, Fabian Radulescu, Brad Avrit & Dong Nguyen, TriQuint Semiconductors & C&D Semiconductor Services	Abstract
11e	Design of Experiments to Achieve High Yield Manufacturing at 6-inch Foundry H.C. Chou, M.C. Liao, J.L. Hsu, L.S. Yip, Y.S. Wu, J.C. Chang, Y.C. Wang, C.G. Yuan, L.J. Meng, W.H. Chu, T.C. Lee, C.B. Ho, P. Chen, J.M. Lee, P.C. Chao, and C.S. Wu, WIN Semiconductors Corporation	Abstract
12a	Manufacturing Technology of InGaP HBT Power Amplifiers for Cellular Phone Applications R. Hattori, S. Suzuki, Y. Yamamoto, S. Miyakuni, N. Ogawa, T. Oku, H. Seki and T. Shimura, Mitsubishi Electric Corp.	Abstract
12b	GaAs Components for 60 GHz Wireless Communication Applications Mansoor Siddiqui, Manny Quijije, Al Lawrence, Brian Pitman, Richard Katz, Phu Tran, Alex Chau, Deborah Davison, Salah Din, Richard Lai and Dwight Streit, Velocium	Abstract
12c	High Yield InGaP HBT Manufacturing Technology on 150-mm GaAs Wafers Y.C. Wang, H.C. Chou, T.C. Tsai, M.C. Tu, Y.J. Chen, P.C. Chao, C. H. Chen, S. M. Liu and C.S. Wu, WIN Semiconductors Corporation	Abstract
12d	Development of Motorola's InGaP HBT Process Mariam Sadaka, Darrell Hill, Fred Clayton, Haldane Henry, Colby Rampley, Jon Abrokwah and Ric Uscola, Motorola	Abstract
12e	Sub-Micron Scaling of High-Speed InP/InGaAs SHBTs Grown by MOCVD using Carbon as the p-Type Dopant M.L. Hattendorf, Q.J. Hartmann, K. Richards, M. Feng, University of Illinois & Epiworks	Abstract
13a	A Comparative Study of DC and Microwave Characteristics of Lattice-matched InP HBTs and Metamorphic HBTs Grown by MBE J.M. Fastenau, A.B. Cornfeld, W.K. Liu, H. Yang, H. Wang, K. Radhakrishnan, J. C. M. Hwang. IQE Inc, Nanyang Technological University & Lehigh University	Abstract
13b	6-inch MOVPE Metamorphic HBT with Low Indium Compsition InGaAs base and collector for High Power Application Y. Otoki, T. Tsuji, N. Sato, T. Tanaka, H. Kamogawa and Y. Sasaki, Hitachi Cable	Abstract
13c	Potential of Metamorphic HEMT with 0.25um Refractory Metal Gate for Power Application in Ka-Band F. Benkhelifa, R. Quay, R. Lösch, K. Schäuble, M. Dammann, M. Mikulla, G. Weimann, Fraunhofer Institute for Applied Solid State Physics	Abstract
13d	GaAs-Based Metamorphic Technology R. E. Leoni III, W. E. Hoke, C. S. Whelan, P. F. Marsh, P. C. Balas II, J. G. Hunt, K. C. Hwang, S. M. Lardizabal, C. Laighton, S. J. Lichwala, Y. Zhang, and T. E. Kazior, Raytheon RF Components	Abstract
13e	GaAs-Based Heterostructures on Silicon Z. Yu, R. Droopad, D. Jordan, J. Curless, Y. Liang, C. Overgaard, H. Li, A. Talin, T. Eschrich, B. Craigo, K. Eisenbeiser, R. Emrick, J. Finder, X. Hu, Y. Wei, J. Edwards, Jr., D. Convey, K. Moore, D. Marshall, J. Ramdani, L. Tisinger, W. Ooms, M. O’Steen, F. Towner, T. Hierl, Motorola & IQE	Abstract

1c

2a

2b

2c

2d

2e

3a

3b

3c

Abstract not available

3e

4a

4b

4c

4d

4e

5a

5b

5c

5d

5e

6a

6b

6c

6d

6e

7a

Implanted MESFETs – Still Going Strong Martin J. Brophy, Richard L. Campbell and William Davenport, TriQuint Semiconductors

7b

7c

7d

GaAs pHEMT Technology for Optical Communication System Tamotsu Kimura, Tomoyuki Ohshima, Masanori Tsunotani, Toshikiko Ichioka and Shohei Seki, Oki Electric Industry

7e

8a

8b

8c

8d

8e

8f

8g

Ultrafast Spectroscopy of InGaN Quantum Wells for the Development of Efficient Emitters Fei Chen, M.C. Cheung, A.N. Cartwright, Paul M. Sweeney, Jeffrey S. Flynn & David Keogh, University of Buffalo & ATMI Inc.

8h

8i

Direct Observation of Gain Collapse Phenomena in Multi-Finger HBTs Using Digital Cameras Toru Sugiyama, Yorito Kakiuchi, Kouhei Morizuka, Yoshiaki Kitaura, Toshiba Corp

8j

Characterization of Electrochemically Deposited Gold for Back-Side Processing of GaAs Wafers Erik Young, Henry Hendriks, Gabriel Rojano, Rajesh Baskaren, Tom Ritzdorf, John Klocke, Semitool Inc. & M/A-Com: Tyco Electronics

8k

8l

In-line Optical and X-ray Measurements of Thickness and Composition for Manufacturing of Heterostructure Bipolar Transistors Stefan Zollner, Mariam G. Sadaka, N.V. Edwards, Candi S. Cook, Q. Xie, Ha T. Le, Jill Hildreth, and Andrew S.Morton, Motorola

8m

In-Situ Optical Thickness Control of Ion Beam Deposited Coatings for the Telecommunications Industry Adrian J. Devasahayam, Ivo Agatic, Adrian Celaru, Warren Cheesman, Boris Druz, Roger Fremgen and Hari Hegde, Veeco Instruments

8n

10a

III-V MOVPE for RF power applications Peter Frijlink, OMMIC

10b

10c

10d

10e

11a

11b

11c

11d

11e

12a

12b

12c

12d

12e

13a

13b

13c

13d

13e

Implanted MESFETs – Still Going Strong
Martin J. Brophy, Richard L. Campbell and William Davenport, TriQuint Semiconductors

GaAs pHEMT Technology for Optical Communication System
Tamotsu Kimura, Tomoyuki Ohshima, Masanori Tsunotani, Toshikiko Ichioka and Shohei Seki, Oki Electric Industry

Ultrafast Spectroscopy of InGaN Quantum Wells for the Development of Efficient Emitters
Fei Chen, M.C. Cheung, A.N. Cartwright, Paul M. Sweeney, Jeffrey S. Flynn & David Keogh, University of Buffalo & ATMI Inc.

Direct Observation of Gain Collapse Phenomena in Multi-Finger HBTs Using Digital Cameras
Toru Sugiyama, Yorito Kakiuchi, Kouhei Morizuka, Yoshiaki Kitaura, Toshiba Corp

Characterization of Electrochemically Deposited Gold for Back-Side Processing of GaAs Wafers
Erik Young, Henry Hendriks, Gabriel Rojano, Rajesh Baskaren, Tom Ritzdorf, John Klocke, Semitool Inc. & M/A-Com: Tyco Electronics

In-line Optical and X-ray Measurements of Thickness and Composition for Manufacturing of Heterostructure Bipolar Transistors
Stefan Zollner, Mariam G. Sadaka, N.V. Edwards, Candi S. Cook, Q. Xie, Ha T. Le, Jill Hildreth, and Andrew S.Morton, Motorola

In-Situ Optical Thickness Control of Ion Beam Deposited Coatings for the Telecommunications Industry
Adrian J. Devasahayam, Ivo Agatic, Adrian Celaru, Warren Cheesman, Boris Druz, Roger Fremgen and Hari Hegde, Veeco Instruments

III-V MOVPE for RF power applications
Peter Frijlink, OMMIC