High Speed 0.18µm
Ion-implanted GaAs MESFET Process with High Uniformity & Excellent
Reproducibility
D. Fukushi, M.
Watanabe and S. Nakajima
Optoelectronics
R&D Laboratories, Sumitomo Electric
1, Taya-cho,
Sakae-ku,
Phone: +81-45-853-7266, Fax: +81-45-853-1291, E-mail: dfukushi@sei.co.jp
Keywords: … Ion-
implantation, MESFET, fT, Vth, uniformity, reproducibility
Abstract:
We successfully obtained an
0.18µm gate MESFET with a high breakdown voltage (Vbd) of 7V, high current gain
cut off frequency (fT) of 100 GHz, and sufficient transconductance (Gm) larger
than 500mS/mm for high-speed front end ICs of optical communications. In
addition, excellent uniformity and reproducibility of device characteristics,
such as the standard deviation (std.) of threshold Voltage (Vth) across a
4-inch wafer of smaller than 35mV and the variation of Vth from wafer to wafer
of smaller than 45 mV, were achieved. These results are comparable to those of
P-HEMT and demonstrated that our ion-implanted MESFETs are suitable for low
cost and high performance IC applications.