Reliability characterization of high
density Metal-Insuslator-Metal Capacitors (MIMCAP) fabrication by depositing
Silicon Nitride using PecVD in Compound Semiconductor Manufacturing
Bhola
N. De, Mohsen Shokrani
ANADIGICS, Inc.,
Email: bde@anadigics.com, mshokrani@anadigics.com
To shrink the size of a die, we have developed high density MIMCAP process for our next generation RFIC products. Using an optimized PecVD process for silicon nitride deposition, we have determined the median time to failure (MTTF) of MIM capacitors using two different electrical tests, Ramp Voltage and Time Dependent Dielectric Breakdown (TDDB). Both of these tests were relatively quick. The TDDB test required small number of samples. We have compared these lifetimes of MIM capacitirs from two different methods at lower operating voltages.
Keywords: Reliability, Process, Deposition, Capacitor, MIMCAP, PecVD