Development of AlGaN/GaN High Power and High Frequency HFETs under NEDO's Japanese National Project

Y. Nanishi⁽¹⁾, H. Miyamoto⁽³⁾, A. Suzuki⁽²⁾, H. Okumura⁽⁵⁾, and N. Shibata⁽⁴⁾

¹Department of photonics, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan

²Research Organization of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi,

Kusatsu, Shiga 525-8577, Japan

³Advanced HF Device R&D Center, R&D Association for Future Electron Devices, 2-9-1 Seiran,

Ohtsu, Shiga 520-0833, Japan

⁴Advanced HF Device R&D Center, R&D Association for Future Electron Devices, 710 Origuchi, Shimomiyake, Nakashima-Gun, Aichi 490-1312, Japan

⁵Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2,

1-1-1, Umezono, Tsukuba, Ibaraki 305-8568, Japan

E-mail: nanishi@se.ritsumei.ac.jp, TEL: +81-77-561-2679

Keywords: National project, GaN, HFET, Wireless communication, High frequency device, High power device

Abstract

NEDO’s Japanese national project on high power and high frequency nitride device is overviewed. Studies on correlation between crystal defects and device performances, electric field and thermal distribution in the device under operating conditions are demonstrated. Excellent CW RF output power of 230 W from a single chip and 371 W peak saturation power from an amplifier composed of paralleled HFET die are achieved at 2 GHz from Recessed FP gate structure. With a development of dual FP gate HFET, a state-of-the-art combination of 160 W output power and a 17.5 linear gain are realized at 2 GHz. At 30 GHz, 5.8 W CW operation are observed from T-gate HFET.

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