KORRIGAN: Development of GaN HEMT Technology in Europe

G. Gauthier¹ and F. Reptin²

¹Thales Airborne Systems, 2 av. Gay-Lussac, 78851 Elancourt, France

+33(0)1 34 81 91 30, gildas.gauthier@fr.thalesgroup.com.

²DGA/DET/PCO, 4 bis rue de la Porte d’Issy, 75509 Paris, France

+33(0)1 45 52 49 34, francois.reptin@dga.defense.gouv.fr

Keywords: GaN, SiC, HEMT, MMIC, reliability

Abstract

This paper reports on the joint multinational initiative KORRIGAN launched in 2005 to accelerate the development of independent GaN HEMT foundries in Europe. The project addresses several key research areas such as materials, processing, reliability, thermal management and advanced packaging solutions. The benefits of GaN technology will be evaluated at system level with the fabrication of circuit, MMIC and module demonstrators. The project is supported by the MOD of seven nations and is primarily dedicated to defence applications. The KORRIGAN consortium consists of major European system houses and research laboratories, under the lead of Thales Airborne Systems, providing all the necessary competence for the establishment of the future GaN HEMT supply chain.

3D.pdf Return to TOC