Investigation of Base-Collector Parasitics For Various Emitter and Base Geometries in GaAsSb/InP Type-II DHBTs

Investigation of Base-Collector Parasitics For Various Emitter and Base Geometries in GaAsSb/InP Type-II DHBTs

Benjamin F. Chu-Kung, Shyh-Chiang Shen*, William Snodgrass, and Milton Feng

Department of Electrical and Computer Engineering · University of Illinois

Micro and Nanotechnology Laboratory · 208 N. Wright Street · Urbana, IL 61801

Phone: (217)244-3662, e-mail: chukung@uiuc.edu

* School of Electrical and Computer Engineering · Georgia Institute of Technology

Center for Compound Semiconductors · 777 Atlantic Drive NW, Van Leer Building · Atlanta, GA 30332-0250

Keywords: HBT, InP, GaAsSb, DHBT

Abstract: GaAsSb/InP type-II DHBT transistors have been fabricated using a number of different base geometries. The devices have been modeled and their small signal parasitic components have been extracted. This work will examine the effects of having a realigned base, then compare different geometries and show why the current power transistor design is not conducive towards high speed applications.