Conference

The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2006 On-line Digest Table of Contents

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1.A	Compound Semiconductors Benchmark Study Oded Tal, Ariel Meyuhas, MAX International Engineering Group	Abstract
1.B	Future Trends for Microwave Compound Semiconductors in Military Systems John Zingaro, Northrop Grumman ES	Abstract
1.C	China’s Compound Semiconductor Industry: The Impact on Global Manufacturing Robert Walker, eLite Optoelectroics, Inc., YEBY Associates, LLC	Abstract
2.A	Semiconductor Innovation and Integration for Next-Generation 3G Multimedia Devices Brian Daly, Skyworks Solutions, Inc	Abstract
2.B	Release for Production of a 150 GHz, 125nm Gate 40% In Metamorphic GaAs HEMT MMIC Process J. Bellaïche, P. Baudet, S. Demichel, M. Renvoisé, H. Maher, J. F. Pautrat, M. G Périchaud, S. Lafont, OMMIC	Abstract
2.C	The First 0.1mm 6” GaAs PHEMT MMIC Process L. Gunter, D. Dugas, S. Yang, P. Seekell, M. Gerlach, J. Diaz, J. Lombardi, W. Hu, P.C. Chao, K. Nichols, W. Kong, B. Golja and K.H.G. Duh, BAE Systems	Abstract
2.D	The Manufacture of Optical Components on 4-inch InP in a GaAs Production Fab C. Youtsey, E. Beam, T. Chou, J. Jimenez, A. Ketterson, A. MacInnes, A. Mahajan, P. Saunier, D. Wohlert, TriQuint Semiconductor	Abstract
2.E	The Effective Use of Process Control Plans and Process Failure Mode Effects Analys in a GaAs Semiconductor Manufacturing Environment Daniel J. Le Saux, Skyworks Solutions, Inc.	Abstract
3.A	Wide-Bandgap Semiconductor Devices for Automobile Applications H. Ueda¹, M. Sugimoto², T. Uesugi¹, and T. Kachi¹, ¹Toyota Central R&D Lab, Inc., ²Toyota Motor Corp.	Abstract
3.B	Preliminary Results from Phase II of the Wide Bandgap Semiconductor for RF Applications (WBGS-RF) Program Mark Rosker¹, Harry Dietrich², Chris Bozada⁴, Alfred Hung³, and Glen David Via⁴, ¹Defense Advanced Research Projects Agency / Microsystems Technology Office , ²Office of Naval Research, ³Army Research Laboratory, ⁴Air Force Research Laboratory	Abstract
3.C	Development of AlGaN/GaN High Power and High Frequency HFETs under NEDO's Japanese National Project Yasushi Nanishi¹, H. Miyamoto², A. Suzuki¹, H. Okumura³, and N. Shibata², ¹Ritsumeikan University, ²R&D Association for Future Electron Devices, ³National Institute of Advanced Industrial Science and Technology	Abstract
3.D	KORRIGAN: Development of GaN HEMT Technology in Europe G. Gauthier¹, Francois Reptin², ¹Thales Airborne Systems, ²DGA/DET/PCO	Abstract
4.A	The SEMI International Standards Program – History, Successes and Lessons Learned to Address Compound Semiconductor Manufacturing Challenges Bettina Weiss, SEMI	Abstract
4.B	White Light Interferometry – A Production Worthy Technique for Measuring Surface Roughness on Semiconductor Wafers Roy T. Blunt, IQE (Europe) Ltd.	Abstract
4.C	Overcoming Difficulties in Photoreflectance Measurements on Product HBTS E.M. Rehder, P. Rice, K.S. Stevens. C. R. Lutz, Kopin Corp.	Abstract
4.D	An Overview of Gallium Nitride Substrate Materials Developments for Optoelectronic and Microelectronic Applications A. D. Hanser¹, L. Liu¹, E. A. Preble¹, D. Tsvetkov¹, M. Tutor¹, N. M. Williams¹, K. Evans¹, Y. Zhou², D. Wang², C. Ahyi², C.-C. Tin², J. Williams², M. Park², D. F. Storm³, D. S. Katzer³, S. C. Binari³, ¹Kyma Technologies, Inc., ²Auburn University, ³Naval Research Laboratory	Abstract
4.E	Recent Achievement of the SopSiC Substrates for High Power and High Frequency Applications R. Langer¹, B. Faure², A. Boussagol², P. Bove¹, H. Lahreche¹, A. Wilk¹, J. Thuret¹, F. Letertre², ¹Picogiga International, ²Soitec	Abstract
5.A	Perfect Quality for Free?! Nien-Tsu Shen, Skyworks Solutions, Inc.	Abstract
5.B	Statistical Quality Control of Wafer Level DC Die Sort Test Y. Z. Wang, R. S. Persaud, R. C. Salvador and D. J. Troy, Anadigics, Inc	Abstract
5.C	SiN Capacitors and ESD Gergana I. Drandova, John M. Beall, Kenneth D. Decker, TriQuint Semiconductor	Abstract
5.D	The Reliability Study of MIM Capacitor Built On Top of Backside Via In III-V Compound MMIC X. Zeng, M. Barsky, J. Uyeda, D. Farkas, F. Yamada, M. Biendenbender, D. Eng, J. Wang, R. Lai, Northrop Grumman ST	Abstract
5.E	Lifetime of SiN Capacitors Determined from Ramped Voltage and Constant Voltage Testing H. C. Cramer, J. D. Oliver, R. J. Porter, Northrop Grumman ES	Abstract
6.A	3.3fF/mm² 40V BST MIM Capacitor Suitable for Above MMIC Integration Satoshi Horiuchi, Katsuji Matsumoto, Mariko Sakachi, Tsuyoshi Ooki, Hideko Nakamura, Kiwamu Adachi, Mamoru Shinohara, Sony Corp.	Abstract
6.B	High Value Thin Film Resistor for GaAs IC Manufacturing Fabian Radulescu¹, Jinhong Yang¹, Paul Miller¹, Ron Herring¹, Chi-Fung Lo², Wolfgang Liebl³, ¹TriQuint Semiconductor, ²Praxair Surface Technology-MRC, ³Infineon Technologies AG	Abstract
6.C	Comparison of Different GaN Etching Techniques Lei Ma, K. Fareen Adeni, Chang Zeng, Yawei Jin, Krishnanshu Dandu, Yoganand Saripalli, Mark Johnson, Doug Barlage, North Carolina State University	Abstract
6.D	Bias Annealing Behavior of Plasma-Induced Defects in n-GaN Exposed to Plasma S. Nakamura, M. Suda, M. Suhara, and T. Okumura, Tokyo Metropolitan University	Abstract
7.A	Status and Progress in InP Optoelectronic Processing: Towards Higher Levels of Integration Jacco L. Pleumeekers, Richard P. Schneider, Jr., Atul Mathur, Sheila K. Hurtt, Peter W. Evans, Andrew G. Dentai, Charles H. Joyner, Damien J. H. Lambert, Sanjeev Murthy, Ranjani Muthiah, Johan Baeck, Mark J. Missey, Randal A. Salvatore, Mehrdad Ziari, Masaki Kato, Radhakrishnan Nagarajan, Fred A. Kish, Infinera Corp.	Abstract
7.B	Compound Semiconductor MOSFET With High-k Dielectric Karthik Rajagopalan, Ravi Droopad, Jon Abrokwah, and Matthias Passlack, Freescale Semiconductor	Abstract
7.C	A Flip-chip Low Band Harmonic Filter Based on GaAs Integrated Passives Jon Abrokwah, Sergio Pacheco, Shun-Meen Kuo, Li Li, Robert Bettiga, Philip Bowles, Gilles Montoriol, Freescale Semiconductor	Abstract
7.D	27 GHz Flip-Chip Assembled pHEMT Oscillator Yue-ming Hsin¹, Yu-An Liu¹, Che-ming Wang¹, Wei-kuo Huang¹, Tsung-Jung Yeh², ¹Taiwan National Central University, ²WIN Semiconductor	Abstract
8.A	Reduction of Chlorinated Solvents in GaAs Manufacturing Victoria Williams, Harold Isom, Thomas Nagle, Cary Sellers, Sean Hillyard, Samuel Roadman, Sumir Varma, TriQuint Semiconductor	Abstract
8.B	Reduction of Platinum Metal Usage in GaAs IC Metallization L. Luu-Henderson, L. Rushing, and S. Tiku, Skyworks Solutions, Inc.	Abstract
8.C	Significant Step in Wafer Yield Optimization and Operation Cost Reduction Due to Dicing Innovation Mark Müller, Rene Hendriks, H. P. Chall, Advanced Laser Separation International	Abstract
8.D	Damage-Free Dicing of SiC Wafers by Wafer-Jet-Guided Laser Sean Green, Delphine Perrottet, Bernold Richerzhagen, Synova-SA	Abstract
9.A	A High Yield Manufacturable BiFET Epitaxial Profile and Process for High Volume Production Mike Sun¹, Pete Zampardi¹, R. Ramanathan¹, A.G. Metzger¹, C. Cismaru¹, Vincent Ho¹, L Rushing¹, K S. Stevens², M. Chaplin², R. E. Welser², ¹Skyworks Solutions, Inc., ²Kopin Corp.	Abstract
9.B	InGaP-Plus™: A Low Cost Manufacturable GaAs BiFET Process Technology Mohsen Shokrani, Kezhou Xie, Boris Gedzberg, Wojciech Krystek, Prabhu Mushini, Aditya Gupta, Pat Fowler, William Peatman, Anadigics, Inc.	Abstract
9.C	High Performance Metamorphic InP/GaAsSb/InP "Type-II" DHBTs Grown on GaAs Substrates Y. Zeng¹, H. G. Liu¹, N. G. Tao¹, C. R. Bolognesi¹, W. Tang², W. Zhou², K. M. Lau², ¹Simon Fraser University, ²Hong-Kong University of Science and Technology	Abstract
9.D	Investigation of Base-Collector Parasitics for Various Emitter and Base Geometries in GaAsSb/InP Type-II DHBTs Benjamin F. Chu-Kung¹, Shyh-Chiang Shen², William Snodgrass¹, and Milton Feng¹, ¹University of Illinois Department of ECE, ²Georgia Institute of Technology	Abstract
12.A	Recent Progress of Highly Reliable GaN-HEMT for Mass Production Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, Kazukiyo Joshin, Fujitsu Laboratories Ltd.	Abstract
12.B	High-Efficiency Amplifiers Using AlGaN/GaN HEMTs on SiC Scott Sheppard, Bill Pribble, R. Peter Smith, Adam Saxler, Scott Allen, Jim Milligan, and Ray Pengelly, Cree Inc.	Abstract
12.C	Combined Infrared and Raman Temperature Measurements on Device Structures A. Sarua¹, Hangfeng Ji¹, M. Kuball¹, M.J. Uren², T. Martin², K. P. Hilton², R. S. Balmer², ¹University of Bristol, ²QinetiQ, Ltd	Abstract
12.D	Mass-Production of High-Voltage GaAs and GaN Devices Eizo Mitani, Hitoshi Haematsu, Shigeru Yokogawa, Junichiro Nikaido, and Yasunori Tateno, Eudyna Devices Inc.	Abstract
12.E	An Ion-Implanted GaAs MESFET Process for 28V S-Band MMIC Applications M. J. Drinkwine, T. Winslow, D. Miller, D. Conway, B. Raymond, M/A-COM, Inc.	Abstract
13.A	Reversible Wafer Bonding; Challenges in Ramping up 150mm GaAs Wafer Production to Meet Growing Demand Suzanne Combe, John Cullen, Matthew O’Keefe, Filtronics ICS	Abstract
13.B	Defect Reduction in Through Wafer Via Photolithography Processing J. Riege, T. Nguyen, H. Knoedler, B. Darley, R. Clark, N. Ebrahimi, S. Mony, S. Tiku, Skyworks Solutions, Inc.	Abstract
13.C	Improvements in the Process for Electrodeposition of Au-Sn Alloys Nasim Morawej¹, Douglas G. Ivey¹, and Siamak Akhlaghi², ¹University of Alberta, ²Micralyne Inc.	Abstract
13.D	Substrate Via Etch Profile Optimization Using RIE and Wet Etch Processes S. E. Roadman, C. Youtsey, C. Sellers, and H. S. Isom, TriQuint Semiconductor	Abstract
13.E	Development of Backside Process for Use with Solder Paste Die Attach Jason Fender and Terry Daly, Freescale Semiconductor	Abstract
14.A	Status of SiC Power Devices and Manufacturing Issues Anant Agarwal and Sei-Hyung Ryu, Cree Inc.	Abstract
14.B	*High-Yield Silicon Carbide Vertical Junction Field Effect Transistor* Manufacturing for RF and Power Applications** Victor Veliadis, Li-Shu Chen, Megan McCoy, Ty McNutt, Eric Stewart, Robert Sadler, Alfred Morse, Steve Van Campen, Chris Clarke, Gregory DeSalvo, Northrop Grumman ES	Abstract
14.C	Technology Development of 4H-SiC RF BJTs with 5GHz f_max Bart Van Zeghbroeck^1,2, Ivan Perez², Feng Zhao^1,2 and John Torvik², ¹University of Colorado, ²Advanced Power Technology	Abstract
14.D	AlGaN/GaN MIS HEMT with AlN Dielectric Chen Tangsheng, Jiao Gang, Li Zhonghui, Li Fuxiao, Shao Kai, Yang Naibin, Nanjing Electronic Devices Institute	Abstract
14.E	SiC, Sapphire, and GaN Materials Status into Opto and RF Businesses Philippe Roussel, Yole Developpement	Abstract
15.A	Low Power High-Speed Circuits with InAs-based HBT Technology C. Monier, A. Cavus, R. S. Sandhu, A. Oshiro, D. Li, E. Kaneshiro, D. Matheson, B. Chan, and A. Gutierrez-Aitken, Northrop Grumman ST	Abstract
15.B	An Ultra-Low Power InAs/AlSb HEMT X-Band Low-Noise Amplifier and RF Switch Jonathan B. Hacker¹, Joshua Bergman¹, Gabor Nagy¹, Gerard Sullivan¹, C. Kadow², H.-K. Lin², A. C. Gossard², Mark Rodwell², B. Brar¹, ¹Rockwell Scientific, ²UC Santa Barbara	Abstract
15.C	MOCVD Grown Metamorphic InAlAs/InGaAs HEMTs on GaAs Substrates Chak-wah Tang, Jiang Li, Kei May Lau, Kevin J. Chen, Hong Kong University of Science and Technology	Abstract
15.D	Temperature Dependence of InGaP/InGaAs/GaAs pHEMTs Man Ni¹, P. Fay¹, N. Pan²,¹University of Notre Dame, ²MicroLink Devices	Abstract
15.E	Beyond CMOS: Logic Suitability of In_0.7Ga_0.3As HEMT Dae-Hyun Kim and Jesús A. del Alamo, Massachusetts Institute of Technology (MIT)	Abstract
16.A	Visual and Electric Ohmic Metal Degradation from Later Process Steps Thorsten Saeger, Tertius Rivers, Dorothy Hamada, Fabian Radulescu, Corey Jordan, Martin J. Brophy, TriQuint Semiconductor	Abstract
16.B	InP/InGaAs DHBT Large Signal Model for Nonlinearity Harmonic Predictions in ICs Yu-Ju Chuang¹, J. W. Lai¹, Kurt Cimino¹, Milton Feng¹, Minh Le², Raymond Milano², R.. B. Elder³, Frank Strolli³, ¹Dept of ECE Univ of Illinois, ²Vitesse Semiconductor, ³BAE Systems	Abstract
16.C	SEMI Standardization Efforts in Compound Semiconductors James D. Oliver¹ and Russ Kremer², ¹Northrop Grumman ES, ²Freiberger USA	Abstract
16.D	A Chemical and Thermal Resistant Wafer Bonding Adhesive Simplifying Wafer Backside Processing A. Smith¹, J. Moore², and B. Hosse³, Brewer Science, Inc., ²DAETEC, LLC, ³RF Micro Devices	Abstract
16.F	Defect Formation in GaN Introduced During Plasma Processing S. Nakamura, M. Suda, M. Suhara, and T. Okumura, Tokyo Metropolitan University	Abstract
16.G	Determining Inductor Interactions with a Design of Experiment M. Meeder, M. Fresina, D. Limanto, M. Tenberge, W. Wohlmuth, Y. Tretiakov, and K. Sheek, RF Micro Devices	Abstract
16.H	Manufacture of Mesa-Type and Air-Bridge Gate In_0.5Al_0.5As/In_0.5Ga_0.5As Metamorphic High Electron Mobility Transistors (MHEMTs) with In_xAl_1-xAs Graded Buffer Layers M. K. Hsu¹, H. R. Chen², W. T. Chen¹, G. H. Chen¹, C. C. Su², and W. S. Lour¹, ¹National Taiwan Ocean University, ²National University of Kaohsiung	Abstract
16.I	Optimizing InGaP/GaAs HBT Technology for Distributed Amplifier Applications Aroonchat Chatchaikarn¹, Wing Yau², Yuefei Yang², and G. P. Li¹, ¹UC Irvine, ²GCS, Inc.	Abstract
16.J	Highly Reliable GaAs Planar Airbridged Schottky Diodes for Flight Qualified Millimeter-wave Circuits Hooman Kazemi, Lan Tran, Don Deakin, Jon B. Hacker, Chanh Nguyen, Rockwell Scientific	Abstract
16.K	Ensuring High Yield and Good Reliability for Mass-Produced High-Performance HallEffect Sensors V. Mosser¹, A. Kerlain¹, Y. Haddab¹, R. Morton², Martin J. Brophy², ¹Itron, Inc., ²TriQuint Semiconductor	Abstract

1.C

2.D

2.E

3.A

3.B

3.C

4.C

4.D

5.A

5.B

5.C

5.D

5.E

6.A

6.B

6.C

6.D

7.A

7.B

7.C

7.D

8.A

8.B

8.C

8.D

9.A

9.B

9.C

9.D