A Temperature Dependent Scalable Large Signal InP/InGaAs DHBT Model

Mark Stuenkel, Yu-Ju Chuang, Kurt Cimino and Milton Feng

Department of Electrical and Computer Engineering, University of Illinois, Urbana IL 61801 Phone: (217) 333-4054, Email: mstuenk2@uiuc.edu

Keywords: Double Heterojunction Bipolar Transistor Scalable Large Signal Transistor Model

Abstract

A scalable large signal device model was developed for type-I InP/InGaAs/InP devices that is based on the UIUC SDD2 model. Through model segmentation and parasitic separation, the model is able to provide accurate modeling of high speed DHBT devices from

0.5 X 3.0 um²to 0.5 X 5.2 um²devices.

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A Temperature Dependent Scalable Large Signal InP/InGaAs DHBT Model

Abstract

0.5 X 3.0 um2 to 0.5 X 5.2 um2 devices.

0.5 X 3.0 um²to 0.5 X 5.2 um²devices.