J. K. Gillespie, G. H. Jessen, G. D. Via, A. Crespo, and D. Langley
Sensors Directorate, Air Force Research Laboratory
Wright-Patterson Air Force Base, OH 45433
M. E. Aumer, H. G. Henry, D. B. Thomson, and D. P. Partlow
Northrop Grumman Electronic Systems
Baltimore, MD 21030
ABSTRACT
In this work, we describe the first reported unstrained InAlN/GaN HEMT on SiC with a 7.5 nm barrier thickness. The device reported has a gate length of 250 nm and demonstrated Imax = 861 mA/mm, gmp = 355
mS/mm, ft = 43 GHz, and fmax[MAG] = 66 GHz. Power measurements for a 7.5 nm barrier device with a 250 nm gate resulted in 2.0 W/mm, 29.3% Peak PAE at X-band.