Conference

2007 Digests

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The International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the Industry"
2007 On-line Digest Table of Contents
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01a	State of the Compound Semiconductor Industry A Focus on Communications Ralph Quinsey CEO TriQuint Semiconductor	Abstract
01b	GaAs Industry in Europe – Technologies, Trends and New Developments Wolfgang Bösch CTO Filtronic IP, Shipley UK,	Abstract
01c	Overview of EMCORE’s Multi-junction Solar Cell Technology and High Volume Manufacturing Capabilities David Danzilio EMCORE Photovoltaics	Abstract
01d	Bulk Acoustic Wave Devices – Why, How, and Where They are Going Steven Mahon and Robert Aigner,TriQuint Semiconductor	Abstract
02a	Process Considerations for Manufacturing 50 μm Thinned III-V Wafers G. Cobb, H. Isom, C. Sellers , V. Williams TriQuint Semiconductor	Abstract
02b	FFT (Flow Free Thin) Mold Study for 44um Fine Pitch Device Application J.M. Liu, Y.S. Lu, X.S. Pang Wireless Packaging System Laboratory, Technology Solutions Organization, Freescale Semiconductor (China) Ltd.	Abstract
02c	High Temperature–Resistant Spin-On Adhesive for Temporary Wafer Mounting Using an Automated High-Throughput Tooling Solution A. Smith, R. Puligadda, W. Hong,T. Matthias, C. Brubaker, M. Wimplinger, and S. Pargfrieder Brewer Science, Inc., EV Group Inc.,	Abstract
02d	Carrier techniques for thin wafer processing C. Landesberger, S. Scherbaum, K. Bock Fraunhofer Institute for Reliability and Microintegration IZM	Abstract
03a	Mechanisms of Premature HEMT Breakdown L. Gunter, W. Zhu, J. Hulse, J. Diaz, P. Seekell, W. Kong, K. Nichols, P.C. Chao BAE Systems	Abstract
03b	THE ROLE OF SUBSTRATE DISLOCATIONS IN CAUSING INFANT FAILURES IN HIGH COMPLEXITY InGaP/GaAs HBT ICs T. S. Low, K. W. Alt, R. E. Yeats, C. P. Hutchinson, D. K. Kuhn, M. Iwamoto, M. E. Adamski, R. L. Shimon, T. E. Shirley, M. Bonse, F. G. Kellert, and D. C. D’Avanzo A. Wibowo, S. Hassler, N. Pan, G. Hillier, and Hani Badawi, Morris Young, Weiguo Liu Agilent Technologies, Inc. MicroLink Devices, Inc. www.mldevices.com AXT, Inc. www.axt.com ,	Abstract
03c	On Wafer Reliability Test Bench for PHEMT and HBT Technologies F. Bourgeois, M. Lanz, G.Jonsson, H. Stieglauer and D. Behammer, United Monolithic Semiconductors	Abstract
03d	Study on effect of fabrication process on TDDB lifetime of MIM capacitor Eudyna Devices Inc., T.Kagiyama, Tosaka, R. Yamabi, and H. Yano	Abstract
03e	Reliability of High-Speed Devices: Probing of Self-Heating with Nanosecond Time-Resolution M. Kuball, G.J. Riedel, J.W. Pomeroy, R. Simms, A. Sarua, M.J. Uren, T. Martin, K.P. Hilton, J.O. Maclean, and D.J. Wallis^,H.H. Wills Physics Laboratory, University of Bristol,QinetiQ Ltd	Abstract
04a	High-Efficiency and Low-Noise AlGaN/GaN HEMTs for K-and Ka-Band Applications Ming-Yih Kao, Cathy Lee, Paul Saunier, Hua-Quen Tserng and Gary Christison, TriQuint Semiconductor	Abstract
04b	A Temperature Dependent Scalable Large Signal InP/InGaAs DHBT Model Mark Stuenkel, Yu-Ju Chuang, Kurt Cimino and Milton Feng, Department of Electrical and Computer Engineering, University of Illinois	Abstract
04c	HfO2-based Metal-Oxide-Semiconductor Capacitors on n-InGaAs Substrate with a Thin Germanium Passivation Layer Hyoung-Sub Kim, I.Ok, M. Zhang, F. Zhu, S. Park, J. Yum, S. Koveshnikov, W. Tsai, V. Tokranov, M.Yakimov, S. Oktyabrsky, and Jack C. Lee. Intel Corporation, The University at albany-SUNY, The University of Texas Austin	Abstract
04d	Realization of InAlN/GaN Unstrained HEMTs on SiC Substrates with a 75 Å Barrier Layer J. K. Gillespie, G. H. Jessen, G. D. Via, A. Crespo, and D. Langley Sensors Directorate, Air Force Research Laboratory Wright-Patterson Air Force Base, M. E. Aumer, H. G. Henry, D. B. Thomson, and D. P. Partlow Northrop Grumman Electronic Systems	Abstract
04e	High Frequency Noise Characterization and Modeling of InGaP/GaAs SHBTs Benjamin F. Chu-Kung, Kurt Cimino, Yu-Ju Chuang, Mark Stuenkel, and Milton Feng Department of Electrical and Computer Engineering · University of Illinois Micro and Nanotechnology Laboratory,A. Wibowo, G. Hillier, and N. Pan Microlink Devices	Abstract
05a	Qualification and Reliability of a GaN Process Platform S. Singhal, A.W. Hanson, A. Chaudhari, P. Rajagopal, T. Li, J.W. Johnson, W. Nagy, R. Therrien, C. Park, A.P. Edwards, E.L. Piner, K.J. Linthicum, I.C. Kizilyalli Nitronex Corporation	Abstract
05b	Reliability Study of AlGaN/GaN HEMTs Device K. Matsushita, S. Teramoto, H. Sakurai, Y. Takada, J. Shim, H. Kawasaki, K. Tsuda and K. Takagi, Microwave Solid-state Department Toshiba Corp., Advanced Electron Devices Laboratory, Research and Development Center, Toshiba Corp	Abstract
05c	Trap Analysis of GaN-Insulated-gatge-HEMT for High Reliability Toshihide Kikkawa, Masahito Kanamura, toshihiroOhki, Kenji Imanishi,Kozo Makiyama, Naoya Okamoto, Naoki Hara and Kazukiyo Joshin, Fujitsu Limited and Fujitsu Laboratories Ltd.	Abstract
05d	Leakage Current Screening for AlGaN/GaN HEMT Mass-Procuction F. Yamaki, K. Ishii, M.Nishi, H. Haematsu, Y. tateno and H. Kawata, Eduyna Devices Inc	Abstract
05e	Failure Mechanisms in GaN HFETs under Accelerated RF Stress A.M. Conway, M. Chen, P. Hashimoto, P.J. Willadsen, and M. Micovic, HRL Laboratories, LLC	Abstract
06a	Improvement of Base Ideality through Improved Surface Cleans Terry Daly, Jason Fender, Agni Mitra, Matt Parker, Darrell Hill, and Adolfo Reyes, Freescale Semiconductor, Inc.	Abstract
06b	Surface Preparation Study in GaAs HBT Process Y. Recsei, C. Luo, S. Tiku, P. Zampardi, Skyworks Solutions,	Abstract
06c	Atomic Hydrogen Cleaning of Epiready InSb (100), (111)B, and GCIB Processed InSb (111)B Surfaces S. R. Vangala, H. Dauplaise, C. Santeufemio, C. Lynch, P. Alcorn, L.P. Allen, G. Dallas, K. Vaccaro, D. Bliss, and W. D. Goodhue, University of Massachusetts, Air Force Research Laboratories, Hanscom/SNHC AFB, Galaxy Compound Semiconductors, Inc.,	Abstract
06d	High-density Plasma Etching of RF-Sputtered Indium-Zinc-Oxide Films in Ar, Ar/Cl2, and Ar/CH4/H2 Chemistries R. Khanna^(1)*, W.T. Lim, L. Stafford, S.J. Pearton, Jae-Soung Park, Ju-Il Song, Young-Woo Heo, Joon-Hyung Lee, and Jeong-Joo Kim^, Department of Materials Science and Engineering, University of Florida, Kyungpook National University	Abstract
07a	Vertical-HVPE as a Production Method for Free-Standing GaN-Substrates B. Schineller, J. Kaeppeler, M. Heuken , AIXTRON AG,	Abstract
07b	Large Area Single Crystal Diamond Wafers; Applications, Status, and Future Perspectives P. Doering, A. Genis, and R. Linares Apollo Diamond, Inc.,	Abstract
07c	GaN on SOD Substrates – The Next Step in Thermal Control J. Zimmer and G. Chandler sp³ Diamond Technologies Inc.,	Abstract
07d	GaN-HEMT Epilayers on Diamond Substrates: Recent Progress D. Francis¹, J. Wasserbauer¹, F. Faili¹, D. Babić¹, F. Ejeckam¹, W. Hong², P. Specht², E. Weber² ¹Group4 Labs, LLC, 1600 Adams Dr., Menlo Park, CA 95025; daniel_francis@group4labs.com, (650) 688 5760 ²Department of Materials Science and Engineering, University of California, Berkeley	Abstract
07e	AlGaN/GaN High Electron Mobility Transistors and Diodes Fabricated on Large Area Silicon on poly-SiC (SopSiC) Substrates for Lower Cost and Higher Yield T. J. Anderson, F. Ren, L. Voss, M. Hlad, B. P. Gila, S. J. Pearton, J.Kim, J. Lin, P. Bove, H. Lahreche , J. Thuret and R. Langer, Department of Chemical Engineering, University of Florida, Picogiga International SAS	Abstract
08a	MMIC Packaging and Heterogeneous Integration Using Wafer-Scale Assembly P. Chang-Chien, X. Zeng, K. Tornquist, M. Nishimoto, M. Battung, Y. Chung, J. Yang, D. Farkas, M. Yajima, C. Cheung, K. Luo, D. Eaves, J. Lee, J. Uyeda, and M. Barsky, Northrop Grumman Space Technology	Abstract
08b	Development of Simple Electrolytes for the Electrodeposition and Electrophoretic Deposition of Pb-free, Sn-based Alloy Solder Films Chunfen Han*, Qi Liu and Douglas G. Ivey Department of Chemical and Materials Engineering, University of Alberta	Abstract
08c	High Yield Intra-Cavity Interconnection Fabrication Method And Characterization Methodologies M. Yajima, P. Chang-Chien, X. Zeng, K. Luo, C. Cheung, K. Tornquist, and M. Barsky, Northrop Grumman Space Technology	Abstract
08d	Development of a Lead Free Solder Bumped RFIC Switch Process Suzanne Combe, John S Atherton, Matthew F O’Keefe, Chris Main Filtronic IP	Abstract
08e	Development of Backside Process for Alternative Die Attach on HBT Jason Fender, Terry Daly, Darrell Hill, Lakshmi Ramanathan, Philip Bowles, Neil Tracht, Freescale Semiconductor, Inc.	Abstract
09a	Influence of the Epitaxy on the Sub-Threshold Drain Leakage Current and the Breakdown Voltage for GaAs pHEMTs P. Abele, F. Bourgeois, J. Splettstoesser, and D. Behammer United Monolithic Semiconductors	Abstract
09b	Gain Enhancement of Junction PHEMT Power Amplifiers for Cellular Phones Kazuki Nomoto, Koichi Hirata, and Mitsuhiro Nakamura, MMIC Development Section, LSI Device Engineering Department, Sony Semiconductor Kyushu Corporation	Abstract
09c	High Voltage GaAs pHEMT Technology for S-band High Power Amplifiers David Fanning, Anthony Balistreri, Edward Beam III, Kenneth Decker, Steve Evans, Robert Eye, Warren Gaiewski, Thomas Nagle, Paul Saunier, Hua-Quen Tserng, TriQuint Semiconductor	Abstract
09d	Development of High Breakdown Voltage InGaP/GaAs DHBTs Jiang Li, Cristian Cismaru, Pete Zampardi, Andy Wu, Eugene Babcock^,Mike Sun, Kevin Stevens, and Ravi Ramanathan^,Skyworks Solutions, Inc., Kopin Corporation	Abstract
09e	Industrial GaInP/GaAs high Power HBT Process for S-Band and L-Band Applications H. Blanck, G. Jonsson, L. Favede, G. Pataut, M. Bonnet, D. Floriot, United Monolithic Semiconductors GmbH	Abstract
10a	0.10 µm Ion-Implanted GaAs MESFETs with Low Cost Production Process M. Watanabe, D. Fukushi, H. Yano, and S. Nakajima, Eudyna devices Inc.	Abstract
10b	pHEMT Gate Formation Using a Dielectrically Defined Gate with No Plasma Damage M. Wayne Pickens, John W. L. Dilley, Brook D. Raymond, Tyco Electronics, Commercial Product Solutions	Abstract
10c	Planarization Process for Transparent Polyimide Coatings to Reduce Topography and Overburden Variation Wu-Sheng Shih¹, Jiro Yota², Hoa Ly², Ketan Itchhaporia¹, and Alex Smith^,Brewer Science, Inc., Skyworks Solutions, Inc.,	Abstract
10d	Low-Cost, High-Performance Multifunction X-band Control MMICs Using Ion- Implanted FET Technology Monte Drinkwine, Hausila Singh and Mike Ashman,M/A-COM, Inc.,	Abstract
10e	Transfer Printed Heterogeneous Integrated Circuits Etienne Menard, Christopher A. Bowe, Joseph Carr and John A. Rogers^,Semprius, Inc., Beckman Institute for Advanced Science and technology, University of Illinois	Abstract
11a	High-Voltage GaN-HEMTs for Power Electronics Applications and Current Collapse Phenomena under High Applied Voltage Wataru Saito, Ichiro Omura and Kunio Tsuda, Toshiba Corp. Semiconductor Company and Toshiba Corp.	Abstract
11b	An 800-W AlGaN/GaN HEMT for S-band High-Power Application Eizo Mitani, Makoto Aojima, Arata Maekawa and Seigo Sano, Eudyna Devices, Inc.	Abstract
11c	Fabrication of a robust high-performance floating guard ring edge termination for power Silicon Carbide Vertical Junction Field Effect Transistors Victor Veliadis, Megan McCoy, Ty McNutt, Harold Hearne, Li-Shu Chen, Gregory DeSalvo, Chris Clarke, Bruce Geil, Dimos Katsis, Skip Scozzie, Northrop Grumman Advanced Technology Laboratory, U.S. Army Research Laboratory,	Abstract
11d	Technological challenges for manufacturing power devices in SiC Peter Friedrichs, SiCED Electronics Development GmbH & Co. KG, a Siemens Company	Abstract
12a	III-V MOSFETs With Native Oxide Gate Dielectrics – Progress and Promise P. Fay, X. Li, Y. Cao, J. Zhang, T. H. Kosel, and D. C. Hall University of Notre Dame	Abstract
12b	Post-Si CMOS: III-V n-MOSFETs with High-k Gate Dielectrics Yanning Sun,S. J. Koester, E. W. Kiewra, J. P. de Souza, N. Ruiz, J. J. Bucchignano, A. Callegari, K. E. Fogel,D. K. Sadana, J. Fompeyrine, D. J. Webb, J.- P. Locquet,M. Sousa,R. Germann, IBM Thomas J. Watson Research Center, IBM Zürich Research Laboratory	Abstract
12c	HIGH MOBILITY III-V MOSFET TECHNOLOGY M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, and P. Zurcher, Freescale Semiconductor, Inc.,	Abstract
13a	InGaP-Plus™: Advanced GaAs BiFET Technology and Applications William Peatman , Mohsen Shokrani, Boris Gedzberg, Wojciech Krystek, and Michael Trippe, ANADIGICS, Inc.,	Abstract
13b	HighPerformance BiHEMT HBT / ED pHEMT Integration T. Henderson, J. Middleton, J. Mahoney, S. Varma, T. Rivers, C. Jordan, and B. Avrit TriQuint Semiconductor	Abstract
13c	Monolithic Integration of E/Dmode pHEMT and InGaP HBT Technology on 150mm GaAs Wafers C. K. Lin, T. C. Tsai, S. L. Yu, C. C. Chang, Y. T. Cho, J. C. Yuan, C. P. Ho, T. Y. Chou, J. H. Huang, M. C. Tu and Y. C. Wang , WIN Semiconductors Corporation	Abstract
13d	Commercial Viability of a Merged HBT-FET (BiFET) Technology for GaAs Power Amplifiers Ravi Ramanathan, Mike Sun, Peter J. Zampardi, Andre G. Metzger, Vincent Ho, Cejun Wei, Peter Tran, Hongxiao Shao, Nick Cheng, Cristian Cismaru, Jiang Li, Shiaw Chang, Phil Thompson, Mark Kuhlman, Kenneth Weller , Skyworks Solutions, Inc.,	Abstract
14a	Development and Ramping of pHEMT in an “HBT Fab” Mike Fresina, C. Barratt, C. Duncan, S. Greene, W. Lewis, L. Li, T. Rogers, C. Santana, W. Wohlmuth, and R. Yanka , RFMD	Abstract
14b	Computer Integrated Manufacturing in smaller GaAs Fabs T. Sterk, C. Denton, N. Naul, TriQuint Semiconductor	Abstract
14c	Resist Dispense Volume Reduction Using the Six Sigma Methodology J. Riege, A. Canlas, D. Barone, D. Crawford, Y. Recsei, S. Mony, N. Ebrahimi, Skyworks Solutions	Abstract
14d	Realizing Throughput Improvement through Machine Rate Modeling – Case Study Marino F. Arturo, Sathish Mudabagila-Gowda, Ariel Meyuhas, MAX I.E.G. LLC	Abstract
14e	Gate Shorts: A Process Engineer’s Nightmare Thorsten Saeger, Travis A Abshere, Fabian Radulescu and Jack Lail, TriQuint Semiconductor	Abstract
15a	Studying Package Delamination by TOF-SIMS and XPS Luo JunHua, Yao JingZhong, Xu XueSong, Adhihetty Indira, Freescale Semiconductor (China)	Abstract
15b	High-Volume Low Frequency Noise Characterization Technique Cristian Cismaru, Mark Banbrook, and Peter J. Zampardi, Skyworks Solutions, Inc.	Abstract
15c	Hydrogen Incorporation of Metal Gate HfO₂ MOS Structures on In_0.2Ga_0.8AsSubstrate with Si Interface Passivation Layer InJo Ok, H.Kim, M.Zhang, F. Zhu, S. Park, J. Yum, S. Koveshnikovl, W. Tsai 1, V. Tokranov², M. Yakimov², S. Oktyabrsky², and Jack C. Lee, Intel Corporation, The University of Texas, Austin	Abstract
15d	Uniformity Correlation of AlGaN/GaN HEMTs grown on 3inch SiC Substrates C. Lee, J. Jimenez, U. Chowdhury, M. Kao, P. Saunier, T. Balistreri, A. Souzis, S. Guo, TriQuint Semiconductor	Abstract
15e	Status of SEMI Standardization Efforts in Compound Semiconductors James D. Oliver and Russ Kremer, Northrop Grumman Electronic Systems, Freiberger Compound Materials USA	Abstract
15f	Plasma Surface Pretreatment Effects on Silicon Nitride Passivation of AlGaN/GaN HEMTs David J. Meyer, Joseph R. Flemish, and Joan M. Redwing Department of Materials Science and Engineering, The Pennsylvania State University	Abstract
15g	Yield Enhancement of 0.15um pHEMT Millimeter Wave Power Amplifiers using an Effective Statistical Analytical Approach Nelson Chen, Scotie Lin, C.K. Lin, Wen Chu, Paul Yeh, H.C. Chou, Joe Liu and C.S. Wu, WIN Semiconductors Corporation	Abstract
15h	Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment Haiou LI, Chak-wah TANG, Kevin J. CHEN, and Kei May LAU, Hong Kong University of Science and Technology	Abstract
15i	A Novel WaterWashable Coating for Avoiding Contamination During Dry Laser Dicing Operations K.C. Su, H.H. Lu, S.H. Chen, C.D. Tsai,Y.C. Chou,W.J. Wu,G.Q. Wu,and J.C. Moore, Lee Chang Yung, Chemical Industrial Corporation (LCY), OPTO Tech Corporation, DAETEC, LLC	Abstract
15j	High-Temperature Electrical Characteristics of SPDT GaAs Switches with Copper Metallized Interconnects Y. C. Wu, E. Y. Chang, Senior Member, IEEE, Y. C. Lin and W. C. Wu, National Chiao-Tung University	Abstract

GaAs Industry in Europe – Technologies, Trends and New Developments Wolfgang Bösch CTO Filtronic IP, Shipley UK,

01c

Overview of EMCORE’s Multi-junction Solar Cell Technology and High Volume Manufacturing Capabilities David Danzilio EMCORE Photovoltaics

Bulk Acoustic Wave Devices – Why, How, and Where They are Going Steven Mahon and Robert Aigner,TriQuint Semiconductor

Process Considerations for Manufacturing 50 μm Thinned III-V Wafers G. Cobb, H. Isom, C. Sellers , V. Williams TriQuint Semiconductor

02c

High Temperature–Resistant Spin-On Adhesive for Temporary Wafer Mounting Using an Automated High-Throughput Tooling Solution A. Smith, R. Puligadda, W. Hong,T. Matthias, C. Brubaker, M. Wimplinger, and S. Pargfrieder Brewer Science, Inc., EV Group Inc.,

02d

Carrier techniques for thin wafer processing C. Landesberger, S. Scherbaum, K. Bock Fraunhofer Institute for Reliability and Microintegration IZM

03a

Mechanisms of Premature HEMT Breakdown L. Gunter, W. Zhu, J. Hulse, J. Diaz, P. Seekell, W. Kong, K. Nichols, P.C. Chao BAE Systems

03b

Study on effect of fabrication process on TDDB lifetime of MIM capacitor Eudyna Devices Inc., T.Kagiyama, Tosaka, R. Yamabi, and H. Yano

Reliability of High-Speed Devices: Probing of Self-Heating with Nanosecond Time-Resolution M. Kuball, G.J. Riedel, J.W. Pomeroy, R. Simms, A. Sarua, M.J. Uren, T. Martin, K.P. Hilton, J.O. Maclean, and D.J. Wallis, H.H. Wills Physics Laboratory, University of Bristol, QinetiQ Ltd

High-Efficiency and Low-Noise AlGaN/GaN HEMTs for K-and Ka-Band Applications Ming-Yih Kao, Cathy Lee, Paul Saunier, Hua-Quen Tserng and Gary Christison, TriQuint Semiconductor

04b

A Temperature Dependent Scalable Large Signal InP/InGaAs DHBT Model Mark Stuenkel, Yu-Ju Chuang, Kurt Cimino and Milton Feng, Department of Electrical and Computer Engineering, University of Illinois

04e

05a

05b

Reliability Study of AlGaN/GaN HEMTs Device K. Matsushita, S. Teramoto, H. Sakurai, Y. Takada, J. Shim, H. Kawasaki, K. Tsuda and K. Takagi, Microwave Solid-state Department Toshiba Corp., Advanced Electron Devices Laboratory, Research and Development Center, Toshiba Corp

05c

05d

05e

Failure Mechanisms in GaN HFETs under Accelerated RF Stress A.M. Conway, M. Chen, P. Hashimoto, P.J. Willadsen, and M. Micovic, HRL Laboratories, LLC

06a

Improvement of Base Ideality through Improved Surface Cleans Terry Daly, Jason Fender, Agni Mitra, Matt Parker, Darrell Hill, and Adolfo Reyes, Freescale Semiconductor, Inc.

06b

Surface Preparation Study in GaAs HBT Process Y. Recsei, C. Luo, S. Tiku, P. Zampardi, Skyworks Solutions,

06c

06d

07a

Vertical-HVPE as a Production Method for Free-Standing GaN-Substrates B. Schineller, J. Kaeppeler, M. Heuken , AIXTRON AG,

07b

Large Area Single Crystal Diamond Wafers; Applications, Status, and Future Perspectives P. Doering, A. Genis, and R. Linares Apollo Diamond, Inc.,

07c

GaN on SOD Substrates – The Next Step in Thermal Control J. Zimmer and G. Chandler sp3 Diamond Technologies Inc.,

07d

07e

08a

MMIC Packaging and Heterogeneous Integration Using Wafer-Scale Assembly P. Chang-Chien, X. Zeng, K. Tornquist, M. Nishimoto, M. Battung, Y. Chung, J. Yang, D. Farkas, M. Yajima, C. Cheung, K. Luo, D. Eaves, J. Lee, J. Uyeda, and M. Barsky, Northrop Grumman Space Technology

08b

Development of Simple Electrolytes for the Electrodeposition and Electrophoretic Deposition of Pb-free, Sn-based Alloy Solder Films Chunfen Han*, Qi Liu and Douglas G. Ivey Department of Chemical and Materials Engineering, University of Alberta

08c

High Yield Intra-Cavity Interconnection Fabrication Method And Characterization Methodologies M. Yajima, P. Chang-Chien, X. Zeng, K. Luo, C. Cheung, K. Tornquist, and M. Barsky, Northrop Grumman Space Technology

08d

Development of a Lead Free Solder Bumped RFIC Switch Process Suzanne Combe, John S Atherton, Matthew F O’Keefe, Chris Main Filtronic IP

08e

Development of Backside Process for Alternative Die Attach on HBT Jason Fender, Terry Daly, Darrell Hill, Lakshmi Ramanathan, Philip Bowles, Neil Tracht, Freescale Semiconductor, Inc.

09a

Influence of the Epitaxy on the Sub-Threshold Drain Leakage Current and the Breakdown Voltage for GaAs pHEMTs P. Abele, F. Bourgeois, J. Splettstoesser, and D. Behammer United Monolithic Semiconductors

Gain Enhancement of Junction PHEMT Power Amplifiers for Cellular Phones Kazuki Nomoto, Koichi Hirata, and Mitsuhiro Nakamura, MMIC Development Section, LSI Device Engineering Department, Sony Semiconductor Kyushu Corporation

High Voltage GaAs pHEMT Technology for S-band High Power Amplifiers David Fanning, Anthony Balistreri, Edward Beam III, Kenneth Decker, Steve Evans, Robert Eye, Warren Gaiewski, Thomas Nagle, Paul Saunier, Hua-Quen Tserng, TriQuint Semiconductor

Development of High Breakdown Voltage InGaP/GaAs DHBTs Jiang Li, Cristian Cismaru, Pete Zampardi, Andy Wu, Eugene Babcock, Mike Sun, Kevin Stevens, and Ravi Ramanathan, Skyworks Solutions, Inc., Kopin Corporation

Industrial GaInP/GaAs high Power HBT Process for S-Band and L-Band Applications H. Blanck, G. Jonsson, L. Favede, G. Pataut, M. Bonnet, D. Floriot, United Monolithic Semiconductors GmbH

0.10 µm Ion-Implanted GaAs MESFETs with Low Cost Production Process M. Watanabe, D. Fukushi, H. Yano, and S. Nakajima, Eudyna devices Inc.

pHEMT Gate Formation Using a Dielectrically Defined Gate with No Plasma Damage M. Wayne Pickens, John W. L. Dilley, Brook D. Raymond, Tyco Electronics, Commercial Product Solutions

Planarization Process for Transparent Polyimide Coatings to Reduce Topography and Overburden Variation Wu-Sheng Shih1, Jiro Yota2, Hoa Ly2, Ketan Itchhaporia1, and Alex Smith, Brewer Science, Inc., Skyworks Solutions, Inc.,

Low-Cost, High-Performance Multifunction X-band Control MMICs Using Ion- Implanted FET Technology Monte Drinkwine, Hausila Singh and Mike Ashman,M/A-COM, Inc.,

Transfer Printed Heterogeneous Integrated Circuits Etienne Menard, Christopher A. Bowe, Joseph Carr and John A. Rogers, Semprius, Inc., Beckman Institute for Advanced Science and technology, University of Illinois

High-Voltage GaN-HEMTs for Power Electronics Applications and Current Collapse Phenomena under High Applied Voltage Wataru Saito, Ichiro Omura and Kunio Tsuda, Toshiba Corp. Semiconductor Company and Toshiba Corp.

An 800-W AlGaN/GaN HEMT for S-band High-Power Application Eizo Mitani, Makoto Aojima, Arata Maekawa and Seigo Sano, Eudyna Devices, Inc.

Technological challenges for manufacturing power devices in SiC Peter Friedrichs, SiCED Electronics Development GmbH & Co. KG, a Siemens Company

III-V MOSFETs With Native Oxide Gate Dielectrics – Progress and Promise P. Fay, X. Li, Y. Cao, J. Zhang, T. H. Kosel, and D. C. Hall University of Notre Dame

HIGH MOBILITY III-V MOSFET TECHNOLOGY M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, and P. Zurcher, Freescale Semiconductor, Inc.,

InGaP-Plus™: Advanced GaAs BiFET Technology and Applications William Peatman , Mohsen Shokrani, Boris Gedzberg, Wojciech Krystek, and Michael Trippe, ANADIGICS, Inc.,

HighPerformance BiHEMT HBT / ED pHEMT Integration T. Henderson, J. Middleton, J. Mahoney, S. Varma, T. Rivers, C. Jordan, and B. Avrit TriQuint Semiconductor

Monolithic Integration of E/Dmode pHEMT and InGaP HBT Technology on 150mm GaAs Wafers C. K. Lin, T. C. Tsai, S. L. Yu, C. C. Chang, Y. T. Cho, J. C. Yuan, C. P. Ho, T. Y. Chou, J. H. Huang, M. C. Tu and Y. C. Wang , WIN Semiconductors Corporation

Development and Ramping of pHEMT in an “HBT Fab” Mike Fresina, C. Barratt, C. Duncan, S. Greene, W. Lewis, L. Li, T. Rogers, C. Santana, W. Wohlmuth, and R. Yanka , RFMD

Computer Integrated Manufacturing in smaller GaAs Fabs T. Sterk, C. Denton, N. Naul, TriQuint Semiconductor

Resist Dispense Volume Reduction Using the Six Sigma Methodology J. Riege, A. Canlas, D. Barone, D. Crawford, Y. Recsei, S. Mony, N. Ebrahimi, Skyworks Solutions

Realizing Throughput Improvement through Machine Rate Modeling – Case Study Marino F. Arturo, Sathish Mudabagila-Gowda, Ariel Meyuhas, MAX I.E.G. LLC

Gate Shorts: A Process Engineer’s Nightmare Thorsten Saeger, Travis A Abshere, Fabian Radulescu and Jack Lail, TriQuint Semiconductor

Studying Package Delamination by TOF-SIMS and XPS Luo JunHua, Yao JingZhong, Xu XueSong, Adhihetty Indira, Freescale Semiconductor (China)

High-Volume Low Frequency Noise Characterization Technique Cristian Cismaru, Mark Banbrook, and Peter J. Zampardi, Skyworks Solutions, Inc.

Status of SEMI Standardization Efforts in Compound Semiconductors James D. Oliver and Russ Kremer, Northrop Grumman Electronic Systems, Freiberger Compound Materials USA

Plasma Surface Pretreatment Effects on Silicon Nitride Passivation of AlGaN/GaN HEMTs David J. Meyer, Joseph R. Flemish, and Joan M. Redwing Department of Materials Science and Engineering, The Pennsylvania State University

Yield Enhancement of 0.15um pHEMT Millimeter Wave Power Amplifiers using an Effective Statistical Analytical Approach Nelson Chen, Scotie Lin, C.K. Lin, Wen Chu, Paul Yeh, H.C. Chou, Joe Liu and C.S. Wu, WIN Semiconductors Corporation

Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment Haiou LI, Chak-wah TANG, Kevin J. CHEN, and Kei May LAU, Hong Kong University of Science and Technology

A Novel WaterWashable Coating for Avoiding Contamination During Dry Laser Dicing Operations K.C. Su, H.H. Lu, S.H. Chen, C.D. Tsai,Y.C. Chou,W.J. Wu,G.Q. Wu,and J.C. Moore, Lee Chang Yung, Chemical Industrial Corporation (LCY), OPTO Tech Corporation, DAETEC, LLC

GaAs Industry in Europe – Technologies, Trends and New Developments
Wolfgang Bösch CTO Filtronic IP, Shipley UK,

Overview of EMCORE’s Multi-junction Solar Cell Technology and High Volume Manufacturing Capabilities
David Danzilio EMCORE Photovoltaics

Bulk Acoustic Wave Devices – Why, How, and Where They are Going
Steven Mahon and Robert Aigner,TriQuint Semiconductor

Process Considerations for Manufacturing 50 μm Thinned III-V Wafers
G. Cobb, H. Isom, C. Sellers , V. Williams TriQuint Semiconductor

High Temperature–Resistant Spin-On Adhesive for Temporary Wafer Mounting Using an Automated High-Throughput Tooling Solution
A. Smith, R. Puligadda, W. Hong,T. Matthias, C. Brubaker, M. Wimplinger, and S. Pargfrieder
Brewer Science, Inc., EV Group Inc.,

Carrier techniques for thin wafer processing
C. Landesberger, S. Scherbaum, K. Bock Fraunhofer Institute for Reliability and Microintegration IZM

Mechanisms of Premature HEMT Breakdown
L. Gunter, W. Zhu, J. Hulse, J. Diaz, P. Seekell, W. Kong, K. Nichols, P.C. Chao BAE Systems

Study on effect of fabrication process on TDDB lifetime of MIM capacitor
Eudyna Devices Inc., T.Kagiyama, Tosaka, R. Yamabi, and H. Yano

Reliability of High-Speed Devices: Probing of Self-Heating with Nanosecond Time-Resolution
M. Kuball, G.J. Riedel, J.W. Pomeroy, R. Simms, A. Sarua, M.J. Uren, T. Martin, K.P. Hilton, J.O. Maclean, and D.J. Wallis^,H.H. Wills Physics Laboratory, University of Bristol,QinetiQ Ltd

High-Efficiency and Low-Noise AlGaN/GaN HEMTs for K-and Ka-Band Applications
Ming-Yih Kao, Cathy Lee, Paul Saunier, Hua-Quen Tserng and Gary Christison, TriQuint Semiconductor

A Temperature Dependent Scalable Large Signal InP/InGaAs DHBT Model
Mark Stuenkel, Yu-Ju Chuang, Kurt Cimino and Milton Feng, Department of Electrical and Computer Engineering, University of Illinois

Reliability Study of AlGaN/GaN HEMTs Device
K. Matsushita, S. Teramoto, H. Sakurai, Y. Takada, J. Shim, H. Kawasaki, K. Tsuda and K. Takagi, Microwave Solid-state Department Toshiba Corp., Advanced Electron Devices Laboratory, Research and Development Center, Toshiba Corp

Failure Mechanisms in GaN HFETs under Accelerated RF Stress
A.M. Conway, M. Chen, P. Hashimoto, P.J. Willadsen, and M. Micovic, HRL Laboratories, LLC

Improvement of Base Ideality through Improved Surface Cleans
Terry Daly, Jason Fender, Agni Mitra, Matt Parker, Darrell Hill, and Adolfo Reyes, Freescale Semiconductor, Inc.

Surface Preparation Study in GaAs HBT Process
Y. Recsei, C. Luo, S. Tiku, P. Zampardi, Skyworks Solutions,

Vertical-HVPE as a Production Method for Free-Standing GaN-Substrates
B. Schineller, J. Kaeppeler, M. Heuken , AIXTRON AG,

Large Area Single Crystal Diamond Wafers; Applications, Status, and Future Perspectives
P. Doering, A. Genis, and R. Linares Apollo Diamond, Inc.,

GaN on SOD Substrates – The Next Step in Thermal Control
J. Zimmer and G. Chandler sp³ Diamond Technologies Inc.,

MMIC Packaging and Heterogeneous Integration Using Wafer-Scale Assembly
P. Chang-Chien, X. Zeng, K. Tornquist, M. Nishimoto, M. Battung, Y. Chung, J. Yang, D. Farkas, M. Yajima, C. Cheung, K. Luo, D. Eaves, J. Lee, J. Uyeda, and M. Barsky, Northrop Grumman Space Technology

Development of Simple Electrolytes for the Electrodeposition and Electrophoretic Deposition of Pb-free, Sn-based Alloy Solder Films
Chunfen Han*, Qi Liu and Douglas G. Ivey Department of Chemical and Materials Engineering, University of Alberta

High Yield Intra-Cavity Interconnection Fabrication Method And Characterization Methodologies
M. Yajima, P. Chang-Chien, X. Zeng, K. Luo, C. Cheung, K. Tornquist, and M. Barsky, Northrop Grumman Space Technology

Development of a Lead Free Solder Bumped RFIC Switch Process
Suzanne Combe, John S Atherton, Matthew F O’Keefe, Chris Main Filtronic IP

Development of Backside Process for Alternative Die Attach on HBT
Jason Fender, Terry Daly, Darrell Hill, Lakshmi Ramanathan, Philip Bowles, Neil Tracht, Freescale Semiconductor, Inc.

Influence of the Epitaxy on the Sub-Threshold Drain Leakage Current and the Breakdown Voltage for GaAs pHEMTs
P. Abele, F. Bourgeois, J. Splettstoesser, and D. Behammer United Monolithic Semiconductors

Gain Enhancement of Junction PHEMT Power Amplifiers for Cellular Phones
Kazuki Nomoto, Koichi Hirata, and Mitsuhiro Nakamura, MMIC Development Section, LSI Device Engineering Department, Sony Semiconductor Kyushu Corporation

High Voltage GaAs pHEMT Technology for S-band High Power Amplifiers
David Fanning, Anthony Balistreri, Edward Beam III, Kenneth Decker, Steve Evans,
Robert Eye, Warren Gaiewski, Thomas Nagle, Paul Saunier, Hua-Quen Tserng, TriQuint Semiconductor

Development of High Breakdown Voltage InGaP/GaAs DHBTs
Jiang Li, Cristian Cismaru, Pete Zampardi, Andy Wu, Eugene Babcock^,Mike Sun, Kevin Stevens, and Ravi Ramanathan^,Skyworks Solutions, Inc., Kopin Corporation

Industrial GaInP/GaAs high Power HBT Process for S-Band and L-Band Applications
H. Blanck, G. Jonsson, L. Favede, G. Pataut, M. Bonnet, D. Floriot, United Monolithic Semiconductors GmbH

0.10 µm Ion-Implanted GaAs MESFETs with Low Cost Production Process
M. Watanabe, D. Fukushi, H. Yano, and S. Nakajima, Eudyna devices Inc.

pHEMT Gate Formation Using a Dielectrically Defined Gate with No Plasma Damage
M. Wayne Pickens, John W. L. Dilley, Brook D. Raymond, Tyco Electronics, Commercial Product Solutions

Planarization Process for Transparent Polyimide Coatings to Reduce Topography and Overburden Variation
Wu-Sheng Shih¹, Jiro Yota², Hoa Ly², Ketan Itchhaporia¹, and Alex Smith^,Brewer Science, Inc., Skyworks Solutions, Inc.,

Low-Cost, High-Performance Multifunction X-band Control MMICs Using Ion- Implanted FET Technology
Monte Drinkwine, Hausila Singh and Mike Ashman,M/A-COM, Inc.,

Transfer Printed Heterogeneous Integrated Circuits
Etienne Menard, Christopher A. Bowe, Joseph Carr and John A. Rogers^,Semprius, Inc., Beckman Institute for Advanced Science and technology, University of Illinois

High-Voltage GaN-HEMTs for Power Electronics Applications and Current Collapse Phenomena under High Applied Voltage
Wataru Saito, Ichiro Omura and Kunio Tsuda, Toshiba Corp. Semiconductor Company and Toshiba Corp.

An 800-W AlGaN/GaN HEMT for S-band High-Power Application
Eizo Mitani, Makoto Aojima, Arata Maekawa and Seigo Sano, Eudyna Devices, Inc.

Technological challenges for manufacturing power devices in SiC
Peter Friedrichs, SiCED Electronics Development GmbH & Co. KG, a Siemens Company

III-V MOSFETs With Native Oxide Gate Dielectrics – Progress and Promise
P. Fay, X. Li, Y. Cao, J. Zhang, T. H. Kosel, and D. C. Hall
University of Notre Dame

HIGH MOBILITY III-V MOSFET TECHNOLOGY
M. Passlack, R. Droopad, K. Rajagopalan, J. Abrokwah, and P. Zurcher, Freescale Semiconductor, Inc.,

InGaP-Plus™: Advanced GaAs BiFET Technology and Applications
William Peatman , Mohsen Shokrani, Boris Gedzberg, Wojciech Krystek, and Michael Trippe, ANADIGICS, Inc.,

HighPerformance BiHEMT HBT / ED pHEMT Integration
T. Henderson, J. Middleton, J. Mahoney, S. Varma, T. Rivers, C. Jordan, and B. Avrit
TriQuint Semiconductor

Monolithic Integration of E/Dmode pHEMT and InGaP HBT Technology on 150mm GaAs Wafers
C. K. Lin, T. C. Tsai, S. L. Yu, C. C. Chang, Y. T. Cho, J. C. Yuan, C. P. Ho, T. Y. Chou, J. H. Huang,
M. C. Tu and Y. C. Wang , WIN Semiconductors Corporation

Development and Ramping of pHEMT in an “HBT Fab”
Mike Fresina, C. Barratt, C. Duncan, S. Greene, W. Lewis, L. Li, T. Rogers, C. Santana, W. Wohlmuth, and R. Yanka , RFMD

Computer Integrated Manufacturing in smaller GaAs Fabs
T. Sterk, C. Denton, N. Naul, TriQuint Semiconductor

Resist Dispense Volume Reduction Using the Six Sigma Methodology
J. Riege, A. Canlas, D. Barone, D. Crawford, Y. Recsei, S. Mony, N. Ebrahimi, Skyworks Solutions

Realizing Throughput Improvement through Machine Rate Modeling – Case Study
Marino F. Arturo, Sathish Mudabagila-Gowda, Ariel Meyuhas, MAX I.E.G. LLC

Gate Shorts: A Process Engineer’s Nightmare
Thorsten Saeger, Travis A Abshere, Fabian Radulescu and Jack Lail, TriQuint Semiconductor

Studying Package Delamination by TOF-SIMS and XPS
Luo JunHua, Yao JingZhong, Xu XueSong, Adhihetty Indira, Freescale Semiconductor (China)

High-Volume Low Frequency Noise Characterization Technique
Cristian Cismaru, Mark Banbrook, and Peter J. Zampardi, Skyworks Solutions, Inc.

Status of SEMI Standardization Efforts in Compound Semiconductors
James D. Oliver and Russ Kremer, Northrop Grumman Electronic Systems, Freiberger Compound Materials USA

Plasma Surface Pretreatment Effects on Silicon Nitride Passivation of AlGaN/GaN HEMTs
David J. Meyer, Joseph R. Flemish, and Joan M. Redwing
Department of Materials Science and Engineering,
The Pennsylvania State University

Yield Enhancement of 0.15um pHEMT Millimeter Wave Power Amplifiers using an Effective Statistical Analytical Approach
Nelson Chen, Scotie Lin, C.K. Lin, Wen Chu, Paul Yeh, H.C. Chou, Joe Liu and C.S. Wu, WIN Semiconductors Corporation

Enhancement-mode metamorphic InAlAs/InGaAs HEMTs on GaAs substrates with reduced leakage current by CF4 plasma treatment
Haiou LI, Chak-wah TANG, Kevin J. CHEN, and Kei May LAU, Hong Kong University of Science and Technology

A Novel WaterWashable Coating for Avoiding Contamination During Dry Laser Dicing Operations
K.C. Su, H.H. Lu, S.H. Chen, C.D. Tsai,Y.C. Chou,W.J. Wu,G.Q. Wu,and J.C. Moore, Lee Chang Yung, Chemical Industrial Corporation (LCY), OPTO Tech Corporation, DAETEC, LLC

High-Temperature Electrical Characteristics of SPDT GaAs Switches with Copper Metallized Interconnects
Y. C. Wu, E. Y. Chang, Senior Member, IEEE, Y. C. Lin and W. C. Wu, National Chiao-Tung University