InP DHBT technology for 100 Gbit/s applications

R. Driad, R.E. Makon, F. Benkhelifa, and R. Lösch,
Fraunhofer Institute for Applied Solid State Physics, Tullastr. 72, 79108 Freiburg, Germany,
email: driad@iaf.fhg.de, Tel: +49-761-5159637
Keywords: Indium Phosphide, Heterojunction Bipolar Transistors (HBTS), Mixed Signal Integrated Circuits.

Abstract
In this paper, we report a manufacturable InP DHBT technology, suitable for medium scale mixed-signal and monolithic microwave integrated circuits. The MBE grown InP-based DHBTs with an emitter area of 1 × 4 μm2 exhibited peak cutoff frequencies (fT and fMAX) > 300 GHz, and a breakdown voltage (BVCEo) of ~ 5 V. The potential of this technology has been first assessed by the realization of a voltage controlled oscillator (VCO), exhibiting a high output power and a large tuning range. Subsequently, a demultiplexer (DEMUX) suitable for 100 Gbit/s fibre optical links, has been successfully fabricated and operated up to 110 Gbit/s.
 
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