Wafer Quality Target for Current-Collapse-Free GaN-HEMTs
in High Voltage Applications

Hidetoshi Fujimoto, Wataru Saito, Akira Yoshioka, Tomohiro Nitta, Yorito Kakiuchi and Yasunobu Saito
Semiconductor Company, Toshiba Corp.
1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan,
Phone: +81-44-549-2601, FAX: +81-44-549-2883, e-mail: hidetosi.fujimoto@toshiba.co.jp
Keywords: … GaN, HEMT, Photoluminescence, Current Collapse, High Voltage
Abstract
We investigated the relation between photoluminescence and current collapse of AlGaN/GaN HEMT wafers grown on silicon substrates. A very good correlation between yellow luminescence intensity and current collapse was found. By optimizing the growth condition to diminish the intensity of yellow luminescence, we obtained AlGaN/GaN HEMT wafers with very small current collapse. It is concluded that the yellow luminescence should be utilized as a very useful index for improving the wafer quality.
 
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