150 nm InP HBT Process with Two-Level Airbridge Interconnects and MIM Capacitors for Sub-Millimeter Wave Research

William Snodgrass, Mark Stuenkel, and Milton Feng

University of Illinois at Urbana-Champaign, Urbana, IL 61801 Phone: (217)244-3662. Email: snodgras@illinois.edu

Keywords: Indium Phosphide, Heterojunction Bipolar Transistor, MMIC.

ABSTRACT
A 150 nm emitter width HBT fabrication process for device-level research is described. Simple passive elements are integrated after device planarization for future demonstration of sub-millimeter wave MMICs.

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